Microstructure changes in Sn-Bi solder joints reinforced with Zn@Sn particles in thermal cycling and thermomigration

WANG, Fengyi; Lv, Ziwen; Sun, Lu; Chen, Hongtao; LI, Mingyu

doi:10.1016/j.jtice.2023.104871

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…Moore's Law has long been the driving force behind advancements in semiconductor technology [1]. Nevertheless, with Si-based electronics nearing their physical limitations, the emergence of thirdgeneration semiconductor materials like GaN and SiC presents new avenues for technological progress.…”

Section: Introductionmentioning

confidence: 99%

BME-Assisted Fabrication of Porous Copper Films with Adjustable Porosity and Ligament Width for Microelectronic Interconnects

Wang,

Jiang,

Liu

et al. 2024

J. Phys.: Conf. Ser.

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Monolithic porous Cu films are synthesized through the use of bicontinuous microemulsion (BME) to serve as a flexible template. The BME system is made up of a series of interconnected linked water and hydrocarbon phases. This one-of-a-kind structure enables precision Cu electrodeposition only in the aqueous phase, avoiding undesirable electrodeposition in the oil phase. We can fine-tune the porosity and ligament width of the resultant copper film by altering the oil phase proportion in the soft template. This Sn-plated porous Cu is capable of both low-temperature reflow and high-temperature service. The flexible template approach shows great potential for creating porous Cu with changeable porosity, allowing for more control over compositions. This approach has potential applications in advanced packaging technologies.

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Section: Introductionmentioning

confidence: 99%

BME-Assisted Fabrication of Porous Copper Films with Adjustable Porosity and Ligament Width for Microelectronic Interconnects

Wang,

Jiang,

Liu

et al. 2024

J. Phys.: Conf. Ser.

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Study on Phase Electromigration and Segregation Behavior of Cu-Cored Sn-58Bi Solder Interconnects under Electric Current Stressing

Liang,

Jiang,

Huang

2023

J. Electron. Mater.

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Cu-cored solder interconnects have been demonstrated to increase the performance of interconnect structures, while the quantitative understanding of the effect of the Cu-cored structure on microstructure evolution and atomic migration in solder interconnects is still limited. In this work, the effect of the Cu-cored structure on phase migration and segregation behavior of Sn-58Bi solder interconnects under electric current stressing is quantitatively studied using a developed phase field model. Severe phase segregation and redistribution of Bi-rich phase are observed in the Cu-cored Sn-58Bi interconnects due to the more pronounced current crowding effect near the Cu core periphery. The average current density and temperature gradient in Sn-rich phase and Bi-rich phase decrease with an increase in the diameter of the Cu core. The temperature gradient caused by Joule heating is significantly reduced owing to the presence of the Cu core. Embedding of the Cu core in the solder matrix could weaken the directional diffusion flux of Bi atoms, so that the enrichment and segregation of the Bi phase towards the anode side are significantly reduced. Furthermore, the voltage across the solder interconnects is correspondingly changed due to the phase migration and redistribution.

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Soft-template-assisted bottom-up fabrication of tunable porosity monolithic copper film for interconnection in microelectronics

Wang,

Lv,

Zhong

et al. 2023

Journal of the Taiwan Institute of Chemical Engineers

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Microstructure changes in Sn-Bi solder joints reinforced with Zn@Sn particles in thermal cycling and thermomigration

Cited by 3 publications

References 30 publications

BME-Assisted Fabrication of Porous Copper Films with Adjustable Porosity and Ligament Width for Microelectronic Interconnects

BME-Assisted Fabrication of Porous Copper Films with Adjustable Porosity and Ligament Width for Microelectronic Interconnects

Study on Phase Electromigration and Segregation Behavior of Cu-Cored Sn-58Bi Solder Interconnects under Electric Current Stressing

Soft-template-assisted bottom-up fabrication of tunable porosity monolithic copper film for interconnection in microelectronics

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