Microstructure and solidification behavior of cast GaInSb alloys

Vincent, J.; Diéguez, E.

doi:10.1016/j.jcrysgro.2006.08.005

Cited by 7 publications

(5 citation statements)

References 18 publications

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“…Firstly, the equilibrium segregation coefficient of In during the growth process of GaInSb crystal is only 0.2, resulting in a seriously uneven component distribution in the grown crystal [16]. Secondly, the segregation of In can lead to the formation of component supercooling at the front of the solid-liquid interface [17]. It is difficult for the solidliquid interface to maintain a flat or slightly convex shape during crystal growth, while the component supercooling will further intensify the bending of the solid-liquid interface, increase the thermal stress in the crystal near the interface, and promote the generation of defects such as dislocations, twinning, and microcracks.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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“…As a result, it is difficult to precisely control the composition ratio in the process of crystal growth without causing a large segregation of indium in the crystals. In addition, the non‐uniformity of the composition distribution at the front of the solid‐liquid interface may lead to the “constitutional super‐cooling”, resulting in instability of the growth interface and poor crystal quality …”

Section: Introductionmentioning

confidence: 99%

High‐Quality GaSb and GaInSb Crystals Prepared by Vertical Bridgman Method

Wang

Teng

et al. 2017

Crystal Research and Technology

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High-quality GaSb and Ga 1-x In x Sb (x = 0.14) crystals were grown via the vertical Bridgman (VB) method. The lattice structure, morphology, optical, and transport properties of the GaSb and GaInSb crystals were characterized. The influence of the indium doping on the physical properties of the GaSb crystal was also investigated. The results demonstrate that the indium doping maintains the zinc-blende lattice structure of the GaSb crystal. The segregation of indium is very low, with the radial and axial concentration variation of 2.32% and 4.84%, respectively. The indium doping significantly reduces the dislocation density down to 1.275 × 10 3 cm −2 . The band gap of the indium-doped GaSb is reduced to 0.549 eV, consistent with the decreased infrared transmission measured by FTIR. Surprisingly, the indium doping changes the majority carrier type of the crystal, from p-type in the pristine GaSb crystal to n-type in the GaInSb crystal. Compared to the GaSb crystal, the GaInSb crystal shows enhanced transport properties, with carrier mobility increased to 2.512 × 10 3 cm 2 /(V•s) and resistivity reduced to 0.521 × 10 −3 ohm•cm.

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“…Semiconductor alloys that exhibit complete miscibility in both, liquid and solid, state as SiGe, InGaAs, and GaInSb, are of great interest as substrates for micro and optoelectronics, as well as bulk for thermophotovoltaic devices [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The solid-liquid (S-L) interface shape during growth process, the growth rate and the rejection on the third element towards the melt, are the main factors that make difficult the growth of these ingots with a structural and compositional homogeneity [1,[8][9][10][11][12][13][14][15][16]. In this way, the main challenge to overcome when growing these ternary alloys is the indium segregation, that causes a constitutional supercooling (CSR) due to solute accumulation at S-L interface front [3,[17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%