Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVD

Ricciardi, Carlo; Primiceli, A.; Germani, G.; Rusconi, A.; Giorgis, Fabrizio

doi:10.1016/j.jnoncrysol.2005.11.137

Cited by 20 publications

(16 citation statements)

References 9 publications

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“…The peaks at 760-790 cm −1 can be assigned to amorphous Si-C vibration. 13,21 From the Raman analysis, it is clear that all the SiC thin films are showing broad bands peaks due to the inelastic scattering and hence all the thin films are amorphous in nature which also agrees with the XRD results. 13 Figure 2c shows the FTIR spectra for all the samples which represents the different mode of vibrations which are related to different bonding present in the SiC thin films.…”

Section: Resultssupporting

confidence: 81%

“…13,21 From the Raman analysis, it is clear that all the SiC thin films are showing broad bands peaks due to the inelastic scattering and hence all the thin films are amorphous in nature which also agrees with the XRD results. 13 Figure 2c shows the FTIR spectra for all the samples which represents the different mode of vibrations which are related to different bonding present in the SiC thin films. The significant peaks are those related to the stretching mode of vibration of Si-C bonds whose wavenumbers are in the range of 740-800 cm −1 , the wagging mode of Si-H bonds are present around 600 cm −1 and the peaks around 1000 cm −1 are related to the wagging mode of Si-CH n bonds.…”

Section: Resultssupporting

confidence: 81%

“…Several researchers had also reported that the composition of the SiC films can be controlled by varying the ratio of the methane and silane gas flow. 12,13 Other properties such as the resistivity of the SiC film can also be improved by using ammonia gas as a dopant during the growth process 14,15 in such deposition process.…”

Section: Introductionmentioning

confidence: 99%

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Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

2015

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Low temperature PECVD (Plasma Enhanced Chemical Vapour Deposition) deposited SiC thin films are promising materials for development of high temperature working MEMS (Microelectromechanical System) due to their excellent mechanical properties, non-corrosive nature and ability to withstand high temperature. However, the surface roughness of such thin films is the main obstacle to achieve thicker thin films for MEMS applications as the surface more rougher by increasing the thickness of PECVD SiC thin films. Therefore, in this present study, thicker SiC thin films were deposited by PECVD process by using the CH 4 and SiH 4 as the precursor gases in presence of Ar as the carrier gas and two process parameters i.e. RF (Radio Frequency) power with mixed frequency condition and flow ratio of silane to methane were varied by keeping the temperature and pressure constant to investigate the influence of these parameters on the growth rate, surface roughness and morphology of SiC thin films. It was observed that both the RF power (with the mixed frequency condition) and flow ratio of SiH 4 /CH 4 can control the growth rate, surface roughness and morphology of the PECVD SiC thin films. Higher the carbon content in the thin films the surface became more smoother whereas the surface became for rougher by increasing the RF power.

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 81%

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Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

2015

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“…Figure 2 shows the Raman spectra for a-SiC:H films deposited on c-Si. All the films present a broad peak at 300-500 cm -1 and centered at 480 cm -1 which is attributed to Si-Si phonons [12]. This result shows that the presence of Si-Si bond is very dominant in the amorphous phase of the film.…”

Section: Resultsmentioning

confidence: 80%

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

Azis

Rahman

Rusop³

et al. 2010

AIP Conference Proceedings

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“…On the other hand, amorphous SiC films have interest related to their high hardness and optical properties and have potential applications as hard, wear resistant coatings, masking material in Si micromaching technology as well as for the formation of optical windows, filters, and color sensors [1,2]. Recently, plasma-assisted deposition methods such as plasma enhanced CVD [3,4], electron cyclotron resonance (ECR) [5,6], the conventional physical vapour deposition methods (magnetron sputtering [7,8], pulsed laser deposition [9,10]), ion implantation [11], and molecular beam epitaxy [12] methods have been used to grow SiC films on Si substrate. However, these methods need high grown temperature, which process defect creation, resulting from high tensile stress generated from a temperature dependent difference in the thermal expansion coefficient between SiC and Si, and involve many pollutions of impurity in the films such as H element.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Chen

Zhuge

2008

Research Letters in Physical Chemistry

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Silicon carbide (SiC) films were prepared by single and dual-ion-beam sputtering deposition at room temperature. An assisted Ar + ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si-C bond in the film has increased. At the same time, the excess C atoms or the size of the sp 2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si-C bond.

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Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVD

Cited by 20 publications

References 9 publications

Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

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