Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

Peri, Bhavana; Borah, B.; Dash, Raj Kishora

doi:10.1007/s12034-015-0881-4

Cited by 8 publications

(6 citation statements)

References 24 publications

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“…It is possible that as the RF power increased, more Ar ions accelerated to hit the Ni target under high power, resulting in more Ni particles being ejected from the target with increased kinetic energy and velocity, resulting in a faster deposition rate. The high sputtering power improved the crystallization of the Ni films and aided in the formation of the Ni films with highly dense microstructures, which, as a result, led to a reduction in the resistivity [22,23]. To check the surface morphology of the Ni films deposited at various RF powers, FESEM images were taken and are shown in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Eadi

Song

et al. 2019

Coatings

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In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10 −5 Ω-cm 2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

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Section: Resultsmentioning

confidence: 99%

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Eadi

Song

et al. 2019

Coatings

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“…Low frequency RF (40 Hz) power and pressure of range 700−1000 Torr, along with changes in the precursor ratios were utilized for the production of films of varying electrical and mechanical properties. The results indicate the potential of the α-SiC films as structural components for devices that need stable residual film stress at high temperatures of operation [36]. Although the thin films of SiC have demonstrated promise in the development of high temperature withstanding MEMS devices, the increase in surface roughness in deposited thicker films remains an obstacle.…”

Section: Semiconductor Devicesmentioning

confidence: 95%

“…The internal plasma parameters that affect the final polymerized film, include homogeneity of discharge, distribution of various species in the plasma, and energy of the species, and the external plasma parameters include reactor geometry, applied voltage, frequency, total pressure, and flow rate [32,36]. Some of the parameters can be modified to create different variants of this technique, namely temperature, length of the deposition, pressure, inert gas flow rate, method of plasma production, and the power of the source.…”

Section: Variation Of Pressure For Plasma Productionmentioning

confidence: 99%

“…Silicon carbide, which has a high band gap and chemical inertness, is another material commonly deposited using PECVD. SiC is used widely as a material for MEMS devices due to its stability in harsh and high temperature environments [36,81,82]. PECVD, being a metal-compatible deposition method has been used for the deposition of α-SiC at 450°C using methane and silane precursor gases.…”

Section: Semiconductor Devicesmentioning

confidence: 99%

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Plasma-Enhanced Chemical Vapor Deposition: Where we are and the Outlook for the Future

Hamedani¹,

Macha²,

Bunning³

et al. 2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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Chemical vapor deposition (CVD) is a technique for the fabrication of thin films of polymeric materials, which has successfully overcome some of the issues faced by wet chemical fabrication and other deposition methods. There are many hybrid techniques, which arise from CVD and are constantly evolving in order to modify the properties of the fabricated thin films. Amongst them, plasma enhanced chemical vapor deposition (PECVD) is a technique that can extend the applicability of the method for various precursors, reactive organic and inorganic materials as well as inert materials. Organic/inorganic monomers, which are used as precursors in the PECVD technique, undergo disintegration and radical polymerization while exposed to a high-energy plasma stream, followed by thin film deposition. In this chapter, we have provided a summary of the history, various characteristics as well as the main applications of PECVD. By demonstrating the advantages and disadvantages of PECVD, we have provided a comparison of this technique with other techniques. PECVD, like any other techniques, still suffers from some restrictions, such as selection of appropriate monomers, or suitable inlet instrument. However, the remarkable properties of this technique and variety of possible applications make it an area of interest for researchers, and offers potential for many future developments.

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“…For example, silicon-based PECVD coatings including hydrogenated amorphous silicon or silicon-based compound materials such as SiON or SiC are nowadays spread in this industrial sector. Some applications in this field include SiON and SiN as insulating layers for metal-insulator-metal capacitors [279] or the utilization of SiC coatings in MEMS devices [280]. These coatings are also commonly used as barrier coatings to encapsulate devices to protect them from outside contaminants and humidity.…”

Section: Application Of Pecvd Technologiesmentioning

confidence: 99%

Foundations of plasma enhanced chemical vapor deposition of functional coatings

Snyders

Hegemann

Thiry

et al. 2023

Plasma Sources Sci. Technol.

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Since decades, the PECVD (“Plasma Enhanced Chemical Vapor Deposition”) processes have emerged as one of the most convenient and versatile approaches to synthesizing either organic or inorganic thin films on many types of substrates, including complex shapes. As a consequence, PECVD is today utilized in many fields of application such as microelectronic circuit fabrication, optics/photonics, biotechnology, energy, smart textiles, and many others. Nevertheless, owing to the complexity of the process including numerous gas phase and surface reactions, the fabrication of tailor-made materials for a given application is still a major challenge in the field making it obvious that the mastery of the technique can only be achieved through the fundamental understanding of the chemical and physical phenomena involved in the film formation.In this context, the aim of this foundation paper is to share with the readers our perception and understanding of the basic principles behind the formation of PECVD layers considering the co-existence of different reaction pathways that can be tailored by controlling the energy dissipated in the gas phase and/or at the growing surface. We demonstrate that the key parameters controlling the functional properties of the PECVD films are similar whether they are inorganic or organic-like (plasma polymers) in nature, thus supporting a unified description of the PECVD process. Several concrete examples of the gas phase processes and the film behavior illustrate our vision.To complete the document, we also discuss the present and future trends in the development of the PECVD processes and provide examples of important industrial applications using this powerful and versatile technology.

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Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications

Cited by 8 publications

References 24 publications

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Plasma-Enhanced Chemical Vapor Deposition: Where we are and the Outlook for the Future

Foundations of plasma enhanced chemical vapor deposition of functional coatings

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