Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

Shaaban, E.R.; Kansal, Ishu; Mohamed, S. H.; Ferreira, J.M.F.

doi:10.1016/j.physb.2009.06.002

Cited by 85 publications

(37 citation statements)

References 27 publications

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“…Grain size of the films increases with rf power and consequently the surface roughness also increases with rf power. Similar behaviour was reported earlier for bismuth selenide thin films prepared by CBD technique [42].…”

Section: Atomic Force Microscopy Studiessupporting

confidence: 90%

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Murugan

Vijayaprasath

Mahalingam

et al. 2015

J Mater Sci: Mater Electron

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Cerium oxide (CeO 2 ) thin films were prepared by rf magnetron sputtering (PVD) technique onto glass substrates at a pressure of 3 9 10 -4 mbar of Ar ? atmosphere. The thickness of deposited CeO 2 films ranges from 380 to 590 nm. X-ray diffraction studies on the films showed that the films are polycrystalline in nature. The crystallite size (D), dislocation density (d) and micro-strain (e) were evaluated from XRD patterns. The obtained micro-strain and dislocation density of the films were found to be *10 -3 and *10 16 lines/m 2 respectively, along with a marginal increase in crystallite size from *6 to *9 nm. The experimental diffraction values of the films agreed with the standard values. The optical properties of cerium oxide films were studied in the wavelength range 325-900 nm. Optical absorption, extinction coefficients, refractive index and optical conductivity were evaluated from optical measurements. The films are found to be highly transparent in visible region and exhibits low reflectance in the ultraviolet region. The optical band gap of the films was found to decrease from 3.53 to 3.45 eV, with the increase of film thickness. The defects were found to increase with the increase of rf power. Emission bands like UV, weak blue, blue, blue-green and green bands were observed from PL spectra of CeO 2 thin films. Raman active mode (F 2g ) of CeO 2 thin films was observed at 466 cm -1 and films deposited at higher rf power show increased line width as well as peak intensity in Raman spectra. Rf power induced formations of flower like morphology were observed in SEM images. The surface roughness of CeO 2 thin films was increased from 2.9 to 7.7 nm with the increase of rf power as ascertained from AFM images and the results are discussed.

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Section: Atomic Force Microscopy Studiessupporting

confidence: 90%

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Murugan

Vijayaprasath

Mahalingam

et al. 2015

J Mater Sci: Mater Electron

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“…Film thickness and the rate of evaporation were monitored with a quartz crystal monitor attached to the vacuum system. The thicknesses of the deposited films were independently checked using F20 profile meter set up [20][21][22].…”

Section: Methodsmentioning

confidence: 99%

Optical characterization of polycrystalline ZnSe1−xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques

Shaaban

El-Hagary

Emam-Ismail

et al. 2015

Materials Science in Semiconductor Processing

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“…It is indicated that when refractive index (n) decreases, wavelength (λ) increases at the same time which shows the normal dispersion behavior of ZnSe thin films. It is noticeable that that the refractive index increases linearly with the film thickness which may lead to the increase of crystallite size and decrease in micro-strain as shown in figure 2 [51]. It is expected that the refractive index value depend in its increase on crystallite size value because of the effect of quantum confinement [52].…”

Section: Evaluation Of Urbach Energymentioning

confidence: 96%

Structure and optical properties of polycrystalline ZnSe thin films: validity of Swanepol’s approach for calculating the optical parameters

Hasaneen

Alrowaili

Mohamed

2020

Mater. Res. Express

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Ultrasonically cleaned glass slides are used as substrates for receiving the different thickness of Zinc selenide (ZnSe) films. The deposition processes of our investigated films were done at room temperature using physical thermal evaporation mechanism under vacuum ≈2×10 5 mbar. We investigated the optical and structural parameters of ZnSe thin films in correlation with film thickness (200-650 nm). Various techniques such as UV-vis-NIR spectrophotometer, x-ray diffraction lines and field emission scanning electron microscope were used to investigate aforementioned parameters. Structural analysis indicate that the films exhibited cubic preferred orientation along the plane (111) and the crystallinity and crystallite size of films increases linearly with film thickness. The optical band gap ranges from 2.69 to 2.81 eV and it is founded that it increases with film thickness. According to the applied Swanepoel's approach, it is possible to estimate the optical parameters and average thickness of the ZnSe thin films of different thicknesses with higher accuracy.

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Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

Cited by 85 publications

References 27 publications

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Optical characterization of polycrystalline ZnSe1−xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques

Structure and optical properties of polycrystalline ZnSe thin films: validity of Swanepol’s approach for calculating the optical parameters

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