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Ultrasonically cleaned glass slides are used as substrates for receiving the different thickness of Zinc selenide (ZnSe) films. The deposition processes of our investigated films were done at room temperature using physical thermal evaporation mechanism under vacuum ≈2×10 5 mbar. We investigated the optical and structural parameters of ZnSe thin films in correlation with film thickness (200-650 nm). Various techniques such as UV-vis-NIR spectrophotometer, x-ray diffraction lines and field emission scanning electron microscope were used to investigate aforementioned parameters. Structural analysis indicate that the films exhibited cubic preferred orientation along the plane (111) and the crystallinity and crystallite size of films increases linearly with film thickness. The optical band gap ranges from 2.69 to 2.81 eV and it is founded that it increases with film thickness. According to the applied Swanepoel's approach, it is possible to estimate the optical parameters and average thickness of the ZnSe thin films of different thicknesses with higher accuracy.

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Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 10 20 cm À3 , and the mobility increased from less than 10 to 45 cm 2 V À1 s À1. A transmittance value of $83% and a resistivity value of 4:4 Â 10 À4 cm were achieved for (CdO) 0:88 (SnO 2) 0:12 film annealed at 350 C for 15 min., whereas the maximum value of transmittance $93% and a resistivity value of 2:4 Â 10 À3 cm were obtained at 350 C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

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