Structure and optical properties of polycrystalline ZnSe thin films: validity of Swanepol’s approach for calculating the optical parameters

Abstract

Ultrasonically cleaned glass slides are used as substrates for receiving the different thickness of Zinc selenide (ZnSe) films. The deposition processes of our investigated films were done at room temperature using physical thermal evaporation mechanism under vacuum ≈2×10 5 mbar. We investigated the optical and structural parameters of ZnSe thin films in correlation with film thickness (200-650 nm). Various techniques such as UV-vis-NIR spectrophotometer, x-ray diffraction lines and field emission scanning electron microscope were used to investigate aforementioned parameters. Structural analysis indicate that the films exhibited cubic preferred orientation along the plane (111) and the crystallinity and crystallite size of films increases linearly with film thickness. The optical band gap ranges from 2.69 to 2.81 eV and it is founded that it increases with film thickness. According to the applied Swanepoel's approach, it is possible to estimate the optical parameters and average thickness of the ZnSe thin films of different thicknesses with higher accuracy.

Mg substitution in zinc selenide: Enhanced optoelectronic and thermoelectric performance

“…The The data presented in Table S2 indicate that the values calculated for the MgSe and ZnSe band gaps are closer to the experimental than others calculated [31][32][33][34][35][36][37][38]. The reason behind the use of the FP-LMTO method through the approximation of local density (LDA), effective Perdew and Wang potential [5], and high k-point (1500). DFT always underestimates the band gaps.…”

“…The IIB‐VIA compounds are considered among important materials, as they have already been used in the fabrication of modulated heterostructures and optical wave guides [2–4]. Nowadays, ZnSe is extensively studied both theoretically and experimentally [5] because of their potential applications that includes laser diodes (LD), light emitting diodes (LED), lasers operating in green and blue wavelength range and solar blind photo detectors (PD), this compound shows a prototype IIB‐VI semiconductor behavior with wide band gap (2.82 eV) [6] and their cubic phase has been called zinc blend structure. Indeed, the II–VI compounds have demonstrated to be a good magnetic diluted semiconductor when substituted by transition metal elements [7–9].…”

Effect of sputtering power and substrate temperature on structural, optical, wettability and anti-icing characteristics of aluminium doped zinc oxide

“…The relation used to calculate the refractive index of deposited aluminium doped zinc oxide was [23]: [ ( )…”

Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation

“…No significant changes in the refractive index may be due to the same optical band gap and thickness for treated films. Besides, three critical phenomena occur in optical absorption spectra: (i) defect and impurities section (weak absorption), (ii) perturbation and disorder structural section (absorption edge), and (iii) the strong absorption section (optical energy gap) [53]. From Figure 8, changes in carrier concentration imputed to CdCl 2 treatment affects the absorption coefficient near the band edge presented as the Urbach energy.…”