“…Furthermore, previous literature mainly focused on MBE-grown high In content ( x > 0.2) InGaN, which is surface kinetics-controlled and takes advantage of the low growth temperature ( T g ) to avoid phase separation and decomposition . While for metal–organic chemical vapor deposition (MOCVD) grown high In content InGaN epilayers, which is governed by a diffusion process and differs from MBE, progress has often been limited by significantly degraded crystal quality due to the deficient ammonia cracking (<5% at 700 °C), making MOCVD less attractive for growing higher In content InGaN and very few works have been dedicated to the morphological evolution and strain relaxation of such InGaN of relatively higher In contents grown by MOCVD. − However, MOCVD is still a leading industrial technique for the growth and fabrication of GaN-based optoelectronic devices. One the other hand, the nonlinear optical properties of high In content InGaN alloy, such as second harmonic generation , and optical rectification, , have attracted special interest because of its promising utilization and relevance in making optical switching and optical telecommunication devices. ,− Therefore, a deeper investigation of In incorporation kinetics, strain relaxation, and resultant morphological evolution of InGaN with high In content grown by MOCVD is currently important and necessary.…”