“…The luminescence properties of the InGaN samples were understood by the fluctuations in the In composition and red shift of the emissions with respect to the formation of V and trench defect.The hall measurements of the InGaN/GaN heterostructures shows more alloy scattering centers and also reveals alteration in the semiconductor behavior with respect to V and trench defect surrounded InGaN layers. From the obtained results, it gives an additional comprehension of the scientific information of the present in respect of the structural (crystalline quality, composition, layer thickness, lattice constants, strain parameters and reciprocal space mapping), morphological (features of V & trench defect, roughness and related width, depth density), luminescence (emissions of three different points-PF, Centre, Edge) and electrical (mobility, bulk &sheet concentration and related scattering mechanism) properties of InGaN layers were studied compare to the other studies[24,26,60]. These kinds of results help further to development of next generation optoelectronics devices (longer wavelength light emitting diodes etc) based on V and trench defects surrounded InGaN layers.…”