Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates

Abstract

Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature.

Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

“…Therefore, we thought that GaAs(1 0 0) surface with twofold symmetry would be more suitable for growing singlephase zb-MnAs films with high quality. XRD results of 200-nm MnAs films grown on GaAs(1 0 0) substrates at growth temperatures of 600 1C reveal that although single-phase zb-MnAs films with lattice constant of 5.73 Å were successfully grown, the magnetization was as small as 80 emu/cm 3 , which is similar to the reported value for zb-MnAs/InAs/GaAs with lattice constant of 5.73 Å [20]. Therefore it can be concluded that zb-MnAs with 5.96 Å has much larger magnetization than that with 5.73 Å .…”

Metastable II–VI sulphides: Growth, characterization and stability

“…Here, it is not obvious that using a ZB substrate can cause the epitaxial layer to adopt the same structure, but in practice this is found to be so, and it has been demonstrated that many materials with the stable RS structure, such as MgSe [4] and MnSe [5] can be grown in the ZB form. More recently, there has been a clear demonstration of the growth of 200 nm thick ZB layers of MnAs, which has the NiAs stable crystal structure [6].…”

Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

“…Very recently, zb-type MnAs nanoclusters were found to be formed by annealing GaMnAs films at a temperature of 500 1C [18]. It was reported that zb-structured MnAs films were grown on GaAs (100) by introducing InAs as an intermediate layer [19,20]. Two kinds of zb-type MnAs films with lattice constants of 5.73 and 5.96Å were also prepared on GaAs (111)B substrates [21].…”