Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

Oomae, Hiroto; Asubar, Joel T.; Nakamura, Shigenari; Yang, Jinbo; Uchitomi, Naotaka

doi:10.1016/j.jcrysgro.2011.11.012

Cited by 23 publications

(10 citation statements)

References 28 publications

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“…More recently it has been claimed that c-MnAs can be grown directly on InP(001) alongside the ordinary hexagonal phase. 15,16 We recently demonstrated the growth of c-MnSb within n-MnSb¯lms on GaAs(111), where the large grain sizes of the c-MnSb (! 10 nm) made structural identi¯cation more straightforward.…”

Section: Introductionmentioning

confidence: 99%

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Bell

Burrows

Hase

et al. 2014

SPIN

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The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap & 1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In 0:5 Ga 0:5 As(111) substrates and analyzed using synchrotron radiation X-ray di®raction. We¯nd polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very di®erent epitaxial strain from the GaAs (3.1%) and In 0:5 Ga 0:5 As (0.31%) substrates.

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Section: Introductionmentioning

confidence: 99%

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Bell

Burrows

Hase

et al. 2014

SPIN

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“…The growth of zinc-blende (zb) type MnAs thin films on InP (001) substrates has been reported [15]. The zbtype MnAs thin films are pseudomorphically latticematched with InP (001) substrates.…”

Section: Resultsmentioning

confidence: 99%

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates

Oomae

Toyota

Emura³

et al. 2014

EPJ Web of Conferences

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Abstract. Mn-doped ZnSnAs 2 (ZnSnAs 2 :Mn) thin films with 5.0 and 6.5% Mn composition were epitaxially grown by molecular beam epitaxy on InP (001) substrates. These films had a Curie temperature of 334 K, corresponding to room-temperature ferromagnetism. The local structures around Mn atoms in ZnSnAs 2 :Mn were studied by analysis of the X-ray absorption fine-structure spectra. It was found that the Mn atoms substitute into Zn or Sn cation sites, and the Mn-As bond length is 2.50 Å, which is slightly smaller than the value of 2.53 Å in a sphalerite (zinc-blende) ZnSnAs 2 bulk crystal. The Mn-As bond length in ZnSnAs 2 :Mn is consistent with the value obtained from GaMnAs, and has a smaller value than that obtained from the zincblend MnAs thin films grown on a InP substrate.

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“…Although rs is not the most stable structure of KM (M = Se and Te), one could grow thin films of this compound over the substrates with rs structure using precise growth techniques such as molecular beam epitaxy (MBE) [10,29]. Thin films that are grown over the substrates with this method would take almost the same structure as the substrate.…”

Section: Bulk Propertiesmentioning

confidence: 99%

“…After that, a number of half-metallic ferromagnets are found theoretically and experimentally. Half-Heusler alloys such as CoMnTe and IrMnAs [3,4]; full-Heusler alloys such as Ti 2 NiAl and Zr 2 CoAl [5,6]; diluted magnetic semiconductors such as Cr, Fe, and Co-doped ZnSe [7]; some of the binary compounds that contain transition metals such as TiTe and MnAs [8][9][10]; and the binary materials that do not contain transition elements such as MC (M = Ca, Sr, and Ba) [11] and MS (M = Li, Na, K, and Cs) [12][13][14] are some of the materials that are approved to be half-metals. Among these half-metallic ferromagnets, the materials that do not contain transition elements seem to be more appropriate in order to be used in spintronic devices because they might have high Curie temperatures [11,14].…”

Section: Introductionmentioning

confidence: 99%

Electronic and Magnetic Properties of the Bulk and Surfaces of Rock salt KM (M = Se and Te): A Density Functional Theory Study

Rostami

Moradi

2015

J Supercond Nov Magn

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Electronic and magnetic properties of the bulk and different surfaces of KM (M = Se and Te) in rock salt structure (rs-KM) have been investigated. The results of our calculations show that these compounds are half-metallic ferromagnets with a magnetic moment of 1 μ B . The origin of half-metallicity is also considered by plotting the partial densities of states (DOSs) and the spin-dependent band structures. The Curie temperatures of the samples are found to be 541 and 386 K for KSe and KTe, respectively. We also find that these compounds can preserve the half-metallicity up to high lattice compressions which means that they could be grown over several semiconductors. The results of the calculations show that the bulk half-metallicity is well preserved at all of the (001), (110), K-terminated (111), and M-terminated (111) surfaces. Using ab initio atomic thermodynamics, we calculate the surface energy as a function of chemical potential to find the most stable surface and we find that the K-terminated (111) surface is the most stable surface over the whole allowed range of the chemical potential.

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Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

Cited by 23 publications

References 28 publications

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates

Electronic and Magnetic Properties of the Bulk and Surfaces of Rock salt KM (M = Se and Te): A Density Functional Theory Study

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Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

Cited by 23 publications

References 28 publications

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2thin films on InP substrates

Electronic and Magnetic Properties of the Bulk and Surfaces of Rock salt KM (M = Se and Te): A Density Functional Theory Study

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XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates