Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

“…Although the lattice constants of our zb-MnAs (6.068 and 6.060Å) are greater than 5.96Å, which is the reported value in Ref. [21], the corresponding values of saturation magnetization and Curie temperature are smaller than their reported values. Comparing sample A with B in the present work, it seems that sample A has better magnetic properties over sample B, implying that the presence of hexagonal MnAs phase leads to the degradation of the net magnetic properties.…”

“…Fig. 6 presents the zero-field cooled magnetization versus temperature curves obtained with a 300 Oe magnetic field applied parallel to the surface of the samples within the temperature range of 10-400 K. and B have Curie temperature values of 308 and 256 K, respectively, which were slightly lower than 310 K [19] and above 350 K [21] previously reported in literature. From these experimental results, the magnetic properties seem to be strongly dependent on growth conditions such as substrate temperature and substrate surface.…”

“…The values of saturation magnetization at 10 K of sample A and B were 300 and 120 emu/cm 3 , respectively. In previous reports, saturation magnetizations of 70 and 500 emu/cm 3 were reported by Kim et al [19] and Kubo et al [21], respectively. Fig.…”

“…It was reported that zb-structured MnAs films were grown on GaAs (100) by introducing InAs as an intermediate layer [19,20]. Two kinds of zb-type MnAs films with lattice constants of 5.73 and 5.96Å were also prepared on GaAs (111)B substrates [21]. In contrast to the research works on GaAs-based spintronic devices, InP-based spintronic materials have also been attractive owing to the possible combination of spintronic materials and InP-based heterojunction devices [22,23].…”

Magnetic properties of InMnAs nanodots prepared by MOVPE

“…We suppose that the presence of MnAs, which crystallizes in the zinc-blende crystallographic system, is a probable explanation for the constant T c value in our samples. Kubo et al [10] prepared zb-MnAs at a growth temperature of 600 1C under stoichiometric conditions. They reported on T c being slightly above 350 K; and a T c of 360 K was reported for zincblende MnAs clusters formed by annealing of GaAs:MnAs structures at 500 1C in a nitrogen atmosphere [11].…”