2020
DOI: 10.1016/j.commatsci.2020.109603
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Half-metal effect on the MnAs/InP (0 0 1)-(2 × 4) interface

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Cited by 6 publications
(4 citation statements)
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“…Their findings suggest that the growth is possible because of the formation of a layer of InAs at the interface. Computational simulations corroborated this assumption, 19 where five possible interfaces were found. Also, in all interfaces, the half-metal property was observed.…”
Section: ■ Introductionmentioning
confidence: 64%
See 1 more Smart Citation
“…Their findings suggest that the growth is possible because of the formation of a layer of InAs at the interface. Computational simulations corroborated this assumption, 19 where five possible interfaces were found. Also, in all interfaces, the half-metal property was observed.…”
Section: ■ Introductionmentioning
confidence: 64%
“…The III–V semiconductor family has been employed in a wide range of technological applications such as electronic, optoelectronic, and spintronic devices. Several studies about the formation of FM/semiconductor interfaces have been reported. Gutierrez et al investigated the epitaxial growth of CrN onto the GaN (111) surface. They found that the interface exhibits half-metal characteristics with a large band gap of 1.91 eV for minority spins when a monolayer (ML) of CrN is deposited.…”
Section: Introductionmentioning
confidence: 99%
“…The formation energy formalism used throughout this paper is based on the principles of thermodynamics, and previous reports have demonstrated the effectiveness of the formalism in comparison with experimental results. Formation energy depends on chemical potentials, rather than number of atoms, allowing us to compare the relative stability of models with different stoichiometries . Our goal with this formalism is to compare the formation energy of our structures and find the most stable ones.…”
Section: Methodsmentioning
confidence: 99%
“…Half-metallic materials are considered to be ideal for applications in spintronics since they possess completely polarized spin channels that can be accessed independently. Some studies have predicted the existence of the half-metallic state in pristine two-dimensional materials, 10,13–16 but the half-metallic state has been more commonly obtained by means of selective doping, 17–21 the application of an external electric field, 22–26 strain, 27–30 in bilayers, 31–33 nanoribbons, 34–39 and using many other techniques.…”
Section: Introductionmentioning
confidence: 99%