Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

“…In an interesting approach, polycrystalline GaN films with improved structural quality have been deposited over ZnO buffer layers on silicon substrates, using MBE [43], MOCVD [44,45] and pulsed laser deposition (PLD) [46,47] techniques. High quality epilayers of GaN have also been deposited on ZnO buffer layer over sapphire substrates, using this approach [44,48,49].…”

MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si

“…ZnO thin films have also recently been investigated for use as potential 'compliant' layers to enable the deposition of single-crystal gallium nitride (GaN) on silicon substrates [5][6][7]. The term 'compliant' suggests that the interlayer, in this case ZnO, is able to elastically accommodate any lattice mis-match between the silicon substrate and the III-V film [8].…”

“…ZnO thin films have been grown by a variety of techniques, such as radiofrequency or magnetron sputtering [9,10], spray pyrolysis [11], molecular beam epitaxy (MBE) [5][6][7] and metalorganic chemical vapour deposition (MOCVD) [12][13][14][15][16] [15] undergo a serious pre-reaction with oxygen leading to heavy particulate contamination and blocked reactor inlet lines. This pre-reaction can be reduced by the use of less reactive oxygen sources such as N 2 O [16,17] or NO 2 [16].…”

Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique

“…In fact, they have already been used as buffer layers for each other. [10][11][12] Various techniques, including PLD, 12 CVD, 13 and MBE, 14 have been utilized to grow ZnO-buffered GaN films on various substrates. However, the optical properties of these as-grown films were not satisfied, especially on Si substrates.…”