Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique

Abstract

GaN films have been fabricated on Si (100) substrates with ZnO buffer layers by an ion-beam-assisted filtered cathodic vacuum arc (I-FCVA) technique at 450°C. GaN films are highly (002)-oriented with a hexagonal structure examined by X-ray diffraction. The room-temperature photoluminescence spectrum of the GaN film exhibits a strong and sharp band-edge emission peak at 3.36 eV. The obtained results demonstrate the potential of the I-FCVA technique for the fabrication of high-quality GaN layers on Si substrates.