Microscopic simulation of electronic noise in semiconductor materials and devices

Varani, L.; Reggiani, L.; Kuhn, Thomas; González, T.; Pardo, D.

doi:10.1109/16.333807

Cited by 85 publications

(53 citation statements)

References 31 publications

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“…In addition, within our approach, the total power spectral density of the current fluctuations, S͑f͒, is obtained from the instantaneous current I͑t͒ by simply using the standard numerical technique. 17 The comparison of the noise characteristics is carried out in terms of the Fano factor, F, defined by S͑0͒ = F ·2·q · ͗I͑t͒͘. It is well known that the explanation of Fig.…”

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confidence: 99%

Self-consistent simulation of quantum shot noise in nanoscale electron devices

Oriols

Trois

Blouin

2004

Applied Physics Letters

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An approach for studying shot noise in mesoscopic systems that explicitly includes the Coulomb interaction among electrons, by self-consistently solving the Poisson equation, is presented. As a test, current fluctuations on a standard resonant tunneling diode are simulated in agreement with previous predictions and experimental results. The present approach opens a new path for the simulation of nanoscale electron devices, where pure quantum mechanical and Coulomb blockade phenomena coexist.

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confidence: 99%

Self-consistent simulation of quantum shot noise in nanoscale electron devices

Oriols

Trois

Blouin

2004

Applied Physics Letters

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“…The noise behavior and the dynamic response of the diodes can be straightforwardly studied by means of MC simulations, since the random microscopic processes source of fluctuations and the fluctuating electric potential are included in a natural way without any approximation. For the noise analysis we follow the standard scheme explained elsewhere [15]. From the instantaneous current values, obtained by using the generalized Ramo-Shockley theorem, the current autocorrelation function is calculated and, in virtue of the Wiener-Kintchine theorem, the corresponding spectral density is determined by Fourier transform.…”

Section: Monte Carlo Modelmentioning

confidence: 99%

Enhanced Terahertz detection in self‐switching diodes

Íñiguez-de-la-Torre

Matéos

Pardo

et al. 2009

Int J Numerical Modelling

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SUMMARYIn this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode.

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“…On the other hand, the calculation of electronic noise at a kinetic level relies mainly on the Monte Carlo method, which has the significant advantage of including selfconsistenly not only the solution for the average values of physical quantities but also their fluctuations [3]. However the Monte Carlo method, due to its intrinsic statistical uncertainty, has difficulties in calculating the distribution function and other transport parameters with a very high accuracy.…”

Section: Introductionmentioning

confidence: 98%

An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

et al. 2006

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International audienceWe extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The method allows also the extraction of the diffusion coefficient in each valley. The results for the case of GaAs with two valleys show that the diffusion in this material is dominated mainly by interactions in the Γ valley. The calculated noise temperature is in good agreement with Monte Carlo result

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Microscopic simulation of electronic noise in semiconductor materials and devices

Cited by 85 publications

References 31 publications

Self-consistent simulation of quantum shot noise in nanoscale electron devices

Self-consistent simulation of quantum shot noise in nanoscale electron devices

Enhanced Terahertz detection in self‐switching diodes

An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

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