Enhanced Terahertz detection in self‐switching diodes

Íñiguez-de-la-Torre, I.; Matéos, J.; Pardo, D.; Song, Aimin; González, T.

doi:10.1002/jnm.731

Cited by 8 publications

(6 citation statements)

References 18 publications

(28 reference statements)

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“…Previous works of our team, performed by means of Monte Carlo (MC) simulations, have already explained the physics of the DC and AC operation of SSDs as well as their noise properties. 10,11 Regarding to their operation as Gunn diodes, it has also been shown that the nucleation and fast transit of high-field domains is promoted by the shape of the SSD. 9 Prior works of our group 12 have demonstrated the technological feasibility of GaN SSDs and foresee the possibility to generate power in the sub-THz frequency band.…”

mentioning

confidence: 99%

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Millithaler

Íñiguez-de-la-Torre

Iniguez-De-La-Torre

et al. 2014

Applied Physics Letters

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In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode. This design, which reduces the effect of the surface-charges at the anode side, is the most favourable one for the onset of Gunn oscillations, which emerge at lower current levels and with lower threshold voltages as compared to the standard square geometry, thus enhancing the power efficiency of the self-switching diode as sub-millimeter wave emitters

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confidence: 99%

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Millithaler

Íñiguez-de-la-Torre

Iniguez-De-La-Torre

et al. 2014

Applied Physics Letters

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“…Equations (2)-(7) are consistent with design dependencies that have been observed previously: Enhancing C h , for example, by reducing W h , can be expected to increase c i and thus b opt , which has been confirmed by MC simulations. 13 It has further been reported that b opt in SSDs is enhanced when W is decreased. 5,6 The model derived above quantifies this effect.…”

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confidence: 92%

On the effect of δ-doping in self-switching diodes

Westlund

Íñiguez-de-la-Torre

Nilsson

et al. 2014

Applied Physics Letters

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International audienceLowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different δ-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 × 1012 cm−2 to 1.5 × 1012 cm−2 (−44%), the noise equivalent power (NEP) improved from 130 pW/Hz½ to 87 pW/Hz½ (−33%)

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“…They are listed as [2][3][4][5][6][7][8][9][10][11][12]. Particular attention was paid for showing the most representative contributions of each conference topic.…”

Section: Photovoltaic Optoelectronic Devices and Displays (21 Contrimentioning

confidence: 99%

Special Issue: 7th Spanish Conference on Electron Devices (CDE2009)

García‐Loureiro

Millán

2010

Int J Numerical Modelling

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The CDE conference has become the main national forum for discussions on the current trends and future directions in the field of electronic devices. Most of the contributions presented in this conference came from Spanish universities and research centres, about 22% of the presentations were collaborations between Spanish and overseas institutions and 11% of the communications presented in the conference come from researchers of foreign universities. Finally, about 4% of the contributions were developed in the following Spanish companies: T-SOLAR S.A., Francisco Alberto S.A., Robotiker-Tecnalia and ISOFOTON S.A. Fifty participants in the conference, out of 150, were PhD students, provided with the opportunity of enhancing their knowledge and experience and establishing new links through interaction with other students and experts in their research field.The scientific program of the conference was organized in a single-session format and comprised 5 invited lectures, 40 contributed talks and 102 poster presentations. The program covers the following topics:1. Materials, technology and process simulation (25 contributions). 2. Device modelling and simulation (40 contributions). 3. Characterization and reliability (11 contributions). 4. Sensors, actuators, microsystems and MEMS (26 contributions).

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Enhanced Terahertz detection in self‐switching diodes

Cited by 8 publications

References 18 publications

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

On the effect of δ-doping in self-switching diodes

Special Issue: 7th Spanish Conference on Electron Devices (CDE2009)

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