Microscopic modeling of nonlinear transport in ballistic nanodevices

Matéos, J.; Vasallo, B. G.; Pardo, D.; González, T.; Galloo, J.S.; Bollaert, S.; Roelens, Y.; Cappy, A.

doi:10.1109/ted.2003.815858

Cited by 83 publications

(81 citation statements)

References 20 publications

(56 reference statements)

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“…Within the FV simulations the layer structure is taken into account, but the device in the z dimension is considered to be homogeneous. This kind of simulations can be useful for the modeling of simple structures, like homogeneous channels or classical transistors 7,8,12,14 . On the other hand, to account for the top geometry of more complicated devices (such as our SSDs and SSTs) TV simulations will be carried out.…”

Section: Monte Carlo Modelmentioning

confidence: 99%

“…Some theoretical descriptions of the operation of ballistic devices have been proposed [2][3][4] , always starting from a coherent transport description based on the Landauer-Buttiker formalism 5,6 . In this work we will make use of a semiclassical 2D Monte Carlo (MC) simulation [successfully employed in previous works for the modelling of different types of InGaAs-based nanodevices: T-and Y-branch junctions and ballistic rectifiers [7][8][9][10][11] ] to explain the physics of the operation of InAlAs/InGaAs based SSDs and SSTs. MC simulations provide an insight of the processes taking place inside the devices, thus allowing us to relate the macroscopic results of the experiments with the microscopic behavior of electrons.…”

Section: Introductionmentioning

confidence: 99%

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THz operation of self-switching nano-diodes and nano-transistors

et al. 2005

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By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881Lett. 83, (2003]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.

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Section: Monte Carlo Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

THz operation of self-switching nano-diodes and nano-transistors

et al. 2005

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“…In the case of the n-type semiconductor, the channel depletion occurs in the positively biased branch, as shown in Fig. 2(b) [19][20][21][22][23][24][25][26] .…”

Section: Device Operation and Possible Mechanismsmentioning

confidence: 99%

“…However, experimentally, it is also clearly observed at room temperature (RT) [14][15][16][17][18] where the carrier transport should be in the nonballistic transport regime. The mechanism in such a case has not been clarified yet, although several hypotheses have been introduced, including those regarding the effective mean free path extension 16) and the asymmetric channel depletion due to the surface potential [19][20][21][22][23][24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

Sato

Kasai

2013

Jpn. J. Appl. Phys.

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Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junction (TBJ) devices were investigated by a light-induced local conductance modulation method. In this measurement system, the conductance in the device was locally increased by focused laser light irradiation. The nonlinear transfer curve was greatly changed when the laser light was irradiated on the positively biased branch. The conductance domain was found to exist at the end of the positively biased branch of the TBJ by scanning the light position. When a SiN x thin layer was deposited on the nanowire surface, the surface potential was increased and the nonlinearity in the transfer curve was reinforced simultaneously. The obtained results suggest that the asymmetric channel depletion model is appropriate for the observed nonlinearity mechanism in the GaAs TBJ at room temperature.

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“…Therefore, the coherent transport plays no significant role in the characteristics of devices reported so far. Recently, Monte Carlo simulation on the above-mentioned devices further indicates 13 that all of the reported main features can be described classically without involving ballistic ͑and coherent͒ transport.…”

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confidence: 98%

Quantum steering of electron wave function in an InAs Y-branch switch

Jones

Yang

et al. 2005

Applied Physics Letters

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We report experimental results on gated Y-branch switches made from InAs ballistic electron waveguides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern, resulting in anticorrelated oscillatory transconductances. Our data provide evidence of steering the electron wave function in a multichannel transistor structure. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1867554͔ Quantum effects in nanostructures provide insights into fundamental issues that cannot be addressed in atomic physics settings and offer perspectives for future applications in computing. 1 In the regime where quantum effects dominate, electron transport exhibits different properties. For example, when the device size becomes less than the elastic mean-free path, electrons can traverse through the conductor ballistically, leading to conductance quantization. In addition, phase coherent transport plays an important role in nanometer-scale devices. Among devices exploiting these quantum effects, the Y-channel transistor is attractive on its own right. The original proposal of the Y-channel transistor, or Y-branch switch ͑YBS͒ ͑Ref. 2͒ came from an electron wave analogy to the fiber optic coupler. The semiconductor version of YBS has a narrow electron waveguide patterned into a "Y" configuration with one source and two drain terminals. A lateral electric field perpendicular to the direction of electric current in the source waveguide steers the injected electron wave into either of the two outputs. YBS offers several advantages as a fast switch as evidenced by THz ͑Refs. 3 and 4͒ operation of quantum point contacts ͑QPC͒. Most interestingly, in the case of single mode occupation, the switching can be accomplished by a voltage of the order of ប͑e t ͒, where t is the transit time of electrons. 5 With a proper design, the switching voltage for a YBS can become smaller than the thermal voltage, k B T / e, as opposed to 40-80 times of k B T / e needed for the current transistors. Here, k B is the Boltzmann constant and T is the absolute temperature. Switching at low voltages would make such devices less noisy and consume less power, though at the expense of speed. 6

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Microscopic modeling of nonlinear transport in ballistic nanodevices

Cited by 83 publications

References 20 publications

THz operation of self-switching nano-diodes and nano-transistors

THz operation of self-switching nano-diodes and nano-transistors

Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

Quantum steering of electron wave function in an InAs Y-branch switch

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