Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules

Masuda, Atsushi; Akitomi, Minoru; Inoue, Masanao; Okuwaki, Keizo; Okugawa, Atsuo; Ueno, Kiyoshi; Yamazaki, Toshiharu; Hara, Kohjiro

doi:10.1016/j.cap.2016.10.001

Cited by 36 publications

(31 citation statements)

References 16 publications

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“…This finding seems to give us some hints that there is a relationship between the extent of PID and the potential of solar modules in some cases. This result agrees with [32,37]. But for module string 6, 7 and 8, the voltages of solar modules from No.…”

Section: Regular and Irregular Degradation Of Open Circuit Voltage Of Module Strings Under Field Conditionssupporting

confidence: 85%

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

2019

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Potential induced degradation (PID) leads to power degradation, and reduces durability and reliability of solar modules. However, this problem has not been thoroughly solved so far. The results from interlaboratory and field study show contradictory fault phenomenon for PID. In this paper, PID of crystalline silicon photovoltaic power plants distributed in various climate conditions was investigated. These photovoltaic power plants consist of two types of crystalline silicon solar modules, which cover almost all kinds of front glass, ethyl vinyl acetate (EVA) and backsheet available commercially. It was found that only a few of power plants were affected by PID. By measuring current voltage characteristics of PID-affected solar modules, the real faults phenomenon was uncovered and classified into regular and irregular power degradation in a module string. The results obtained in this work show that the negative potential caused by high system voltage and stacking faults are necessary and sufficient conditions for PID occurrence for the first time. The anomalous power degradation is related to the stacking fault, which appears randomly during the crystal growth.

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Section: Regular and Irregular Degradation Of Open Circuit Voltage Of Module Strings Under Field Conditionssupporting

confidence: 85%

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

2019

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“…Such a rapid increase in the expansion rate may result in an abrupt increase in the power loss in solar cells, as previously reported. 5,14,16,34) Indeed, it is speculated that Na diffusion into the n-p junction induces irreversible PID processes. 34) Meanwhile, the expansion rate decreases with the concentration of n-type dopants, which may be related to the suppression of the PID in Si heavily doped with P atoms 18) and that in Si cells under photo-illumination.…”

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confidence: 99%

Interaction of sodium atoms with stacking faults in silicon with different Fermi levels

Ohno

Morito

Kutsukake

et al. 2018

Appl. Phys. Express

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Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: it was reduced by more than 10 mJ/m 2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.

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“…This finding implies that PID recovery phenomena are diffusion‐driven processes. [ 12,13,47 ] Masuda et al [ 94 ] showed that PID‐affected cells recover almost completely by storage at room temperature for a long time. This phenomenon requires a considerably longer time, such as 460 days.…”

Section: Pid Phenomena In Conventional P‐type C‐si Pv Cell Modulesmentioning

confidence: 99%

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

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Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules

Cited by 36 publications

References 16 publications

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

Interaction of sodium atoms with stacking faults in silicon with different Fermi levels

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

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