Micropatterning of thin P3HT films via plasma enhanced polymer transfer printing

Kim, Hye-Jin; Yoon, Bokyung; Sung, Jinwoo; Choi, Dae‐Geun; Park, Cheolmin

doi:10.1039/b807285j

Cited by 50 publications

(56 citation statements)

References 29 publications

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“…We improved the transfer printing previously reported [25,26] to pattern a ferroelectric polymer/metal bilayer on a metal substrate in single transfer step for direct fabrication of arrays of MFM microcapacitors. A spin-coated PVDF/PMMA film floated on deionized water was first transferred onto the Au layer deposited on a topographic PDMS pre-pattern.…”

Section: Resultsmentioning

confidence: 99%

“…Patterning of PVDF/PMMA Capacitors: An elastomeric PDMS mold was fabricated by curing a PDMS precursor (Sylgard 184, Dow Corning Corp) on a pre-patterned silicon master as described in a previous work [26]. To transfer the micro-patterned PVDF/PMMA with Au layer, a gold layer with a thickness of 50 nm was deposited on the micro-patterned PDMS stamp surface by thermal evaporation and subsequently a PVDF/PMMA film floated on the DI water was overlaid on the Au-deposited PDMS mold.…”

Section: Methodsmentioning

confidence: 99%

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Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory

Kang

Park

Bae

et al. 2009

Adv Funct Materials

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245

193

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Here, a facile route to fabricate thin ferroelectric poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin‐coating and subsequent melt‐quenching is described. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale β‐type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or an organic semi‐conducting channel layer enable fabrication of a highly reliable ferroelectric capacitor and transistor memory unit operating at voltages as low as 15 V. For instance, with a TIPS‐pentacene single crystal as an active semi‐conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I–V hysteresis with a drain current bistability of 103 and data retention time of more than 15 h at ±15 V gate voltage. Furthermore, the robust interfacial homogeneity of the ferroelectric film is highly beneficial for transfer printing in which arrays of metal/ferroelectric/metal micro‐capacitors are developed over a large area with well defined edge sharpness.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory

Kang

Park

Bae

et al. 2009

Adv Funct Materials

Self Cite

245

193

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show abstract

“…In order to transfer SLG, the adhesion force for the SLG and the target substrate should be higher than that of the PDMS/SLG interface. [19][20][21] Using this technique, we are able to transfer SLG onto a variety of substrates. Figure 2 b shows the result of transferring SLG onto a poly(4-vinylphenol) (PVP) substrate.…”

Section: Doi: 101002/adma201101570mentioning

confidence: 99%

Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs

et al. 2011

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“…[61][62][63][64][65][66][67] Figure 4a shows a photograph of the as-prepared P3HT film transferred to vertical AuNWs/PDMS electrodes. To investigate the charge injection between our electrodes and p-type organic semiconductors, we integrated P3HT thin films with the AuNWs/PDMS electrodes to form metal-organic semiconductor contacts.…”

mentioning

confidence: 99%

Patterning Vertically Grown Gold Nanowire Electrodes for Intrinsically Stretchable Organic Transistors

Zhu

Gong

Lin

et al. 2018

Adv Elect Materials

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facile fabrication. [15][16][17][18] Metal nanowires (gold, silver, copper, etc.) [19][20][21][22][23][24] and carbon based materials such as carbon nanotubes (CNTs) and graphene, [25][26][27][28][29][30][31] have received tremendous research attention in constructing intrinsically stretchable electrodes for organic electronics.Among those choices, raw materials cost of gold may not be the lowest, but it offers superior advantages in biomedical applications of wearable and implantable electronics, due to the attributes including high conductivity, mechanical robustness, chemical inertness, and biocompatibility. [32][33][34] For example, the conductivity of gold is two orders higher than carbon based materials. [35] Also, gold has been known to be anti-oxidative and anti-corrosive, while silver or copper fails in maintaining a long-term stability in complex body fluidic environments. Furthermore, the work function of gold is close to the HOMO levels of many p-type organic semiconductors such as poly(3-hexylthiophene) (P3HT) and pentacene, offering small hole-injection barriers and low contact resistance at metal-organic semiconductor interfaces. [36][37][38][39][40] Although little research attention had been paid to improving contact resistance in stretchable organic transistors because the state-of-the-art device performance is mostly hindered by channel resistance, advances in high mobility organic semiconductors will make contact resistance increasingly crucial in determining device performance, rendering gold materials more favorable in stretchable organic electronics. [41][42][43][44][45][46] Nevertheless, gold nanomaterials based electrodes have hitherto yet been well developed for intrinsically stretchable transistors. 2D gold nanosheets have been assembled to stretchable electrodes for P3HT fiber based stretchable organic transistors with good mechanical and electrical performance. [47][48][49] However, 2D gold nanosheets, fabricated at relatively high temperature (95 °C), are rigid in nature and the fabrication process is incompatible to the patterning processes via conventional photo lithography, and hence may limit device density, mechanical robustness, and scalability. [15] 1D gold nanowires (AuNWs) have emerged as an excellent materials candidate for serving as electrodes in stretchable electronics because of their mechanical flexibility, ease of fabrication, and Advances in large-area organic electronics for sensor arrays and electronic skins demand highly stretchable, patternable, and conformal electrodes to minimize contact resistance when sensing devices are mechanically deformed. Gold is an excellent electrode material with work function matching well with p-type organic transistors. However, it is non-trivial to fabricate highly stretchable gold electrodes for stretchable organic electronics. Here, by combining the advantages of both top-down patterning and bottomup synthesis, a new materials platform of patterned vertically grown gold nanowires (AuNWs) for constructing intrinsically stretcha...

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Micropatterning of thin P3HT films via plasma enhanced polymer transfer printing

Cited by 50 publications

References 29 publications

Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory

Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory

Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs

Patterning Vertically Grown Gold Nanowire Electrodes for Intrinsically Stretchable Organic Transistors

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