Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs

Kang, Seok Ju; Kim, Bumjung; Kim, Keun Soo; Zhao, Yüe; Chen, Zheyuan; Lee, Gwan Hyoung; Hone, James; Kim, Philip; Nuckolls, Colin

doi:10.1002/adma.201101570

Cited by 102 publications

(79 citation statements)

References 26 publications

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“…3A), a little higher than that of single-layer rGO [33], indicating rGO is stackingfree during the reduction process and SiO 2 NC is flatly grown on rGO. The aggregation-free rGO sheet should be benefited from the mild reaction process.…”

Section: Preparation and Characteriazation Of Catalystsmentioning

confidence: 93%

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Yang

Wang

Xing

et al. 2016

Applied Catalysis B: Environmental

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Section: Preparation and Characteriazation Of Catalystsmentioning

confidence: 93%

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Yang

Wang

Xing

et al. 2016

Applied Catalysis B: Environmental

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“…Dry transfer of graphene using polydimethylsiloxane (PDMS) [15][16][17][18][19][20][21][22] , thermal release tape [23][24][25] , electrostatic process 26 and pressure sensitive adhesive 27 have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Transfer printing of CVD graphene FETs on patterned substrates

et al. 2015

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We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCAcleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω µm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

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“…Kang et al [4] modified the transfer technique by inking the stamp process, enabling the transfer of single-layer graphene onto a Si/SiO 2 substrate in a pattern defined by the geometry of the PDMS stamp. As shown in Fig.…”

Section: Stamping Methodsmentioning

confidence: 99%

“…Figure 3.3b shows the microscale features of graphene on a SiO 2 substrate, presenting graphene patterns over a large area of 20 × 1000 µm, confirming the technique's capability to transfer large-area patterns. The transfer mechanism is that the adhesion between the graphene and the target substrate is higher than that of the PDMS/graphene interface [4,15]. Graphene films with a variety of shapes were transferred onto different substrates using the same technique, such as poly(4-vinylphenol) (PVP; Fig.…”

Section: Stamping Methodsmentioning

confidence: 99%

“…For the CVD-grown graphene, the underlying substrates need to be removed so that the graphene sheets can be transferred onto the device substrates. Several strategies have been developed to transfer graphene sheets and they include the etching and stamping method [3,4], thermal release method [5], photoresist method [6], roll-to-roll transfer method [7], and general method [8]. Another lowcost route to produce graphene-based TCs on a large scale is to synthesize GO thin films and then reduce them.…”

mentioning

confidence: 99%

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Fabrication of Graphene-Based Transparent Conducting Thin Films

Zheng

Kim

2015

Graphene for Transparent Conductors

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Chemical vapor deposition (CVD)-grown graphene and graphene oxide (GO) have been the main starting materials to produce graphene-based transparent conductors (TCs) [1,2]. For the CVD-grown graphene, the underlying substrates need to be removed so that the graphene sheets can be transferred onto the device substrates. Several strategies have been developed to transfer graphene sheets and they include the etching and stamping method [3,4], thermal release method [5], photoresist method [6], roll-to-roll transfer method [7], and general method [8]. Another lowcost route to produce graphene-based TCs on a large scale is to synthesize GO thin films and then reduce them. The ease of solution process of GO sheets due to their high solubility in aqueous solutions has made it a more viable and favorable approach [2]. Once a GO dispersion is produced, GO films can be formed on a substrate using different deposition techniques, including electrophoretic deposition (EPD), spin coating, spray coating, dip coating, transfer printing, LangmuirBlodgett (L-B) assembly, rod coating, and inkjet coating [1]. CVD-Grown Graphene-Based TCs Etching MethodAfter graphene is grown on a metal substrate as described in Sect. 2.2, graphene needs to be transferred to the device substrate via a post-transfer process, which usually involves two main steps: (i) etching of the metal substrate and (ii) transfer of graphene onto the target substrate. The removal of growth substrate, such as Cu and Ni, is usually performed by immersing the substrate with the graphene film into the etching bath until a free-standing graphene membrane floating on the solution can be readily observed [9][10][11]

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Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs

Cited by 102 publications

References 26 publications

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Transfer printing of CVD graphene FETs on patterned substrates

Fabrication of Graphene-Based Transparent Conducting Thin Films

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