Micromachined piezoelectric membrane acoustic device

Ko, Sang Choon; Kim, Yong Chul; Lee, Seung Seob; Choi, Seung Ho; Kim, Sang Ryong

doi:10.1016/s0924-4247(02)00310-2

Cited by 184 publications

(67 citation statements)

References 4 publications

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“…If W 1 and W 2 are the weights of the substrate before and after film deposition in gm., A is the area of film deposition in cm 2 and ρ is the theoretical density of ZnO (5.6 gm/cm 3 ), then the film thickness is evaluated as:…”

Section: Results and Discussion (A) Film Thickness Measurementmentioning

confidence: 99%

“…Zinc oxide (ZnO) is an interesting wide band gap (~3.3 eV) II-VI semiconductor because exhibits numerous characteristics suited for various technological applications such as antireflection coatings, transparent electrodes in solar cells [1], piezoelectric devices [2],gas sensors [3], varistors [4], UV and blue light emitters [5] and even thin film transistors [6]. It is also being considered as a potential candidate in the new frontiers of research like spintronics [7].…”

Section: Introductionmentioning

confidence: 99%

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Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Sarma¹,

Chakrabortty²,

Sarma³

2014

IJIRSET

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ABSTRACT:A novel and simple chemical route was used for the deposition of ZnO thin film from aqueous solution of zinc-ammonia complex, integrating the merits of successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition methods. ZnO thin films on glass substrates were deposited with the precursor of zincammonia complex. Characterization techniques of XRD, SEM, EDAX and DRS are used to characterize ZnO thin films. X-ray diffraction study show that the film prepared in this work exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane, with a texture coefficient value of ~2.56, average crystallite size of 28.92 nm and with lattice constants a = b = 3.257 Å, c = 5.215 Å. EDAX spectrum indicates that the film consists of zinc and oxygen elements. The optical band gap energy of the thin films is calculated from optical absorption spectrometry using DRS data and the value was found to be direct allowed transition ~3.22 eV.

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Section: Results and Discussion (A) Film Thickness Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Sarma¹,

Chakrabortty²,

Sarma³

2014

IJIRSET

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show abstract

“…Zinc oxide ZnO is a wide band gap (3.4 eV) semiconductor which has broad range of potential uses in optical and electrical applications such as in solar energy conversion, thin film transistors, photocatalysis, nonlinear optics, gas sensors, pigments, cosmetic, LED, anti-UV and low-emission coatings, and photoluminescent and sensor materials [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Aluminum Doped Zinc Oxide Nanostructures via Hydrothermal Route

Al-Kahlout

Dahoudi

Grobelsek

et al. 2014

Journal of Materials

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Stable crystalline aluminum doped zinc oxide (AZO) nanopowders were synthesized using hydrothermal treatment processing. Three different aluminum precursors have been used. The Al-precursors were found to affect the morphology of the obtained nanopowders. AZO nanoparticles based on zinc acetate and aluminum nitrate have been prepared with different Al/Zn molar ratios. XRD investigations revealed that all the obtained powders have single phase zincite structure with purity of about 99%. The effect of aluminum doping ratio in AZO nanoparticles (based on Al-nitrate precursor) on structure, phase composition, and particle size has been investigated. The incorporation of Al in ZnO was confirmed by UV-Vis spectroscopy revealing a blue shift due to Burstein-Moss effect.

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“…A different approach to micro speaker development is the piezoelectric type, as reported amongst others in [8][9][10][11][12]. Driven not only by applications in the audio field but most importantly by biomedical and underwater ultrasound applications and requirements, the piezoelectric micro ultrasonic transducer (pMUT) has been widely described in [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Characterization and Modelling of Circular Piezoelectric Micro Speakers for Audio Acoustic Actuation

Mendoza-López

Sánchez-Solano

Huertas-Díaz

2012

ISRN Mechanical Engineering

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A study of circular piezoelectric micro speakers is presented for applications in the audio frequency range, including values for impedance, admittance, noise figures, transducer gain, and acoustic frequency responses. The micro speakers were modelled based on piezoelectric micro ultrasonic transducer (pMUT) design techniques and principles. In order to reach the audio frequency range, transducer radii were increased to the order of one centimetre, whilst piezoelectric layer thicknesses ranged the order of several μm. The micro actuators presented might be used for a variety of electroacoustic applications including noise control, hearing aids, earphones, sonar, and medical diagnostic ultrasound. This work main contribution is the characterization of the design space and transducer performance as a function of transducer radius, piezoelectric layer thickness, and frequency range, looking towards an optimized fabrication process.

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Micromachined piezoelectric membrane acoustic device

Cited by 184 publications

References 4 publications

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Synthesis and Characterization of Aluminum Doped Zinc Oxide Nanostructures via Hydrothermal Route

Characterization and Modelling of Circular Piezoelectric Micro Speakers for Audio Acoustic Actuation

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