Synthesis and Characterization of Aluminum Doped Zinc Oxide Nanostructures via Hydrothermal Route

Al-Kahlout, Amal; Dahoudi, Naji Al; Grobelsek, Ingrid; Jilavi, Mohammad H.; Oliveira, Peter William de

doi:10.1155/2014/235638

Cited by 37 publications

(25 citation statements)

References 28 publications

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“…Thin film properties such as crystal structures, surface structures, band gap and optical absorption and electrical/optical conductivity of ZnO has been improved by introducing dopants in to ZnO lattice [4]. The transition metals (Al, Cu, Ni, Ag, Co) doped ZnO show better properties which are suitable for photovoltaic (PV) application, as these metals have ionic radius nearly similar to ZnO [5,6]. Al 3+ has been the most used dopant element due to its small ionic radius and low material cost.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

Tyona¹,

Osuji²,

Lokhande³

et al. 2018

JMPC

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Photoelectrochemical (PEC) solar cell studies of Al doped zinc oxide (AZO) thin film electrodes has been carried out by photocurrent-voltage (I-V) characteristic. The concentration of Al in ZnO was varied between 1-5 at.% in order to study the effect of the variation on the photovoltaic performance of the electrodes. The currentvoltage (I-V) characteristics measured in the dark and under 80 W simulated illumination revealed enhanced PV performance for the AZO electrodes in contrast to the undoped electrode. The best response was achieved for AZO electrode with 2 at.% Al concentration thus, recording higher conversion efficiency and fill factor. This is a clear indication that AZO electrodes are superior to undoped ZnO in PV applications. The remarkable enhanced properties of Al doping on ZnO were carefully studied by means of thickness measurement, X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-Vis spectroscopy, and the results were in good agreement, and confirmed that AZO thin film electrodes are better for PV applications than undoped ZnO semiconductor in sodium sulphate (Na 2 SO 4 ) electrolyte.

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Section: Introductionmentioning

confidence: 99%

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

Tyona¹,

Osuji²,

Lokhande³

et al. 2018

JMPC

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“…Clearly the crystallite size decreases moderately with the dopant addition until cobalt concentrations of 0.6% (2 strips of cobalt), where the increment of cobalt content seems to promote the growth of crystallites. As reported for other authors, the decrease tendency in grain size is typically associated to the substitution of Zn +2 by dopant atoms, whose introduce a structure asymmetry that limits the crystallite growth [31,[33][34]62]. Our results suggest that until 0.6% of cobalt addition, the dopant atom occupies the tetrahedral sites of zinc, decreasing the ZnO crystallite until 18nm.…”

Section: Cobalt Influence On the Crystal And Electronic Structure Of Znosupporting

confidence: 80%

“…Since XRD patterns depict the formation of Wurtzite structure indifferently from the cobalt concentration, the increment in mean crystallite size for samples with higher cobalt concentration may indicate the appearance of segregates with bigger crystallite sizes as reported by Alkahlout et al where they have doped zinc oxide with aluminum 34 . In their study, doping…”

Section: Cobalt Influence On the Crystal And Electronic Structure Of Znomentioning

confidence: 74%

“…By increasing of the charge carriers number, it is possible to improve the electrical conductivity of n-type zinc oxide. Some studies have performed the doping of ZnO with metals such as aluminum, gallium and indium, achieving a significant increment in the charge carrier concentration and producing one of the transparent materials with highest conductivity available today 30,[33][34][35][36] .…”

Section: Zinc Oxide Compoundmentioning

confidence: 99%

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The effect of morphology and cobalt concentration on the sensing properties of zinc oxide sputtered films

Calderon¹

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The effect of morphology and cobalt concentration on the sensing properties of zinc oxide sputtered films São Carlos 2018 Os nossos resultados propõem o método de deposição RF-Sputtering como uma técnica versátil na produção de sensores semicondutores para gases, uma vez que a porosidade e assim a sensibilidade pode ser controlada por meio da deposição de metais e dopantes seguido por oxidação térmica. Palavras-chave: Sensor de gás, Sputtering, Óxido de zinco, Ozônio, Filme fino. ABSTRACT COLMENARES CALDERON, Y. N The effect of morphology and cobalt concentration on the sensing properties of zinc oxide sputtered films. 93p. Dissertação (Mestrado) -Escola de Engenharia de São Carlos, Universidade de São Paulo, São Carlos, 2018.The use of semiconductor materials applied in gas sensing devices is currently one of the most researched topics in air quality control and environmental protection. The research is focused on the production of new sensing materials with improved detection limits, selectivity, working temperatures and response times of the known semiconductor materials. Although theoretical models show the great importance of morphology on gas detection, a direct relation between structure size/morphology and the gas sensing properties has not been experimentally established. In this work, Radio Frequency-sputtering method is used to deposit and produce zinc oxide thin films from ceramic and metallic targets, in which the latter are submitted to thermal oxidation to obtaining ZnO porous films. The samples are deposited on platinum interdigitated electrodes and the electrical behavior is analyzed when exposed to ozone. The effects of feature size and film porosity are studied regarding the enhancement of sensor performance. The results show sensors with small features and low porosity present low ozone sensitivity and fast response; while greater features in highly porous films exhibit low sensitivity and slower responses. The optimum sensing performance is found to be somewhere between when the apparent surface area available for adsorption is maximized and the best ozone response is registered. On the other hand, the electrical behavior of doped films when exposed to ozone demonstrates cobalt presence plays a fundamental role. By inserting cobalt, we could improve the sensor response by 62% under the same conditions. However, the increase of doping concentration modify the zinc oxide conductivity to p-type and drastically decrease the sensor response due to the possible formation of cobalt oxide segregates. Our results propose RF sputtering deposition as a versatile technique in the production of semiconductor gas sensors, once high porosity and, therefore, sensitivity can be controlled through the deposition of metals, and dopants, followed by thermal oxidation.

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“…Aluminium doped ZnO (AZO) has received wider recognition for its high transparency, gassensing property, stability, good conductivity and optical properties. Mondal et al [4], Tarasov and Raccurt [5], Alkahlout et al [6], and many other scientists reported blue shift in AZO nanomaterials, identified to be the Burstein-Moss effect. Doping of ZnO with Al was also attempted by other researchers to realize transparent ohmic contact for applications such as n-type layers in photovoltaic devices, especially in solar cells, FET and lightemitting devices [7].…”

Section: Introductionmentioning

confidence: 97%

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Patwari

Kalita

Singha

2016

Materials Science-Poland

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Al and Cu doped ZnO nanoparticles are considered as appropriate for modulation of structural and optoelectronic properties. Al atoms are found to substitute the host Zn whereas Cu dopants mainly segregate in grain boundaries and thereby determine the optical properties. The undoped as well as Al and Cu doped ZnO exhibit spherical well defined particles. The spherical nanoparticles change to rod type structures on co-doping. The average particle size decreases on doping what consequently results in an increment in band gap. Blue shift in UV absorption is governed by the functional group of glucose; further blue shift occurring on metal doping may be attributed to Burstein-Moss effect. PL spectra of doped and undoped ZnO show a dominant near band gap UV emission along with visible emission owing to the defects. The PL peak intensity increases on doping with Cu and Al. The linear I-V characteristics indicate the ohmic behavior of ZnO nanostructures.

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Synthesis and Characterization of Aluminum Doped Zinc Oxide Nanostructures via Hydrothermal Route

Cited by 37 publications

References 28 publications

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

The effect of morphology and cobalt concentration on the sensing properties of zinc oxide sputtered films

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

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