Microhardness and structural defects of GaSe layered semiconductor

Defects in GaSe grown by Bridgman method

“…It should be pointed that the cleaved GaSe(001) surface shows specifically high chemical inertness in the air under normal conditions similar to several other layered chalcogenides (Tambo & Tatsuyama, ; Atuchin et al ., ; Yashina et al ., ). Above this, the single or few atom tetralayer GaSe flakes can be prepared by the exfoliation in an appropriate solution under ultrasonical stimulation, and this method is actively used in nanotechnology because electronic structure of GaSe is strongly dependent on the tetralayer number (Allakhverdiev et al ., ; Gautam et al ., ; Rybkovskiy et al ., ; Hu et al ., ; Aksimentyeva et al ., ; Ma et al ., ). Recently, the formation of the 3D topological insulator state has been predicted for the GaSe surface (Zhu et al ., ).…”

“…The weak interlayer chemical bonds in the GaSe structure results in low mechanical properties and high GaSe crystal cleavage. This provides a possibility to prepare the large area (001) crystal surface by a simple cleavage technique, and the cleaved surface commonly possesses optical quality and atomic level flatness (Fernelius, 1994;Sarkisov et al, 2010;Borisenko et al, 2011;Isik & Gasanly, 2012;Atuchin et al, 2013a,b;Guo et al, 2013b;Ni et al, 2013). It should be pointed that the cleaved GaSe(001) surface shows specifically high chemical inertness in the air under normal conditions similar to several other layered chalcogenides (Tambo & Tatsuyama, 1985;Atuchin et al, 2011;Yashina et al, 2013).…”

Growth of GaSe and GaS single crystals

“…However, due to the perfect cleavage along {001} and very low hardness [2], the GaSe can not be cut and polished at arbitrary direction that limits its application. Doping is a well known technique to modify various physical properties of the crystals: transparency range; nonlinear and linear optical and mechanical properties; thermal conductivity, etc.…”

Фотопроводимость монокристаллов слоистого полупроводника p-GaSe, легированного редкоземельными элементами, и многодиапазонный фотоприемник света на их основе

“…Слоистая кристаллическая структура, высокая химическая стойкость, возможность расслаивания до наноразмерных слоев с атомарно-зеркальной поверхностью делают фоточувствительные монокристаллы p-GaSe перспективным материалом для оптоэлектроники [1][2][3]. Однако слабая межслойная связь в этом полупроводнике приводит к низкой механической прочности и твердости, которые, вызывая случайное дефектообразование, заметно затрудняют изготовление фотоэлектрических функциональных элементов высокого качества на основе его монокристаллов.…”