Growth of GaSe and GaS single crystals

Кох, К. А.; Andreev, Yu. M.; Svetlichnyi, V. A.; Ланский, Г. В.; Kokh, A. E.

doi:10.1002/crat.201100055

Cited by 51 publications

(41 citation statements)

References 17 publications

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“…We proposed the use of a single-zone furnace while gradually moving the ampoule inside 16 . This technique seems more reliable because the vapor pressure inside the ampoule may be estimated visually by its color.…”

Section: Crystal Growth and Sample Fabricationmentioning

confidence: 99%

“…This lack of application of GaSe is the result of the difficulty in growing and processing large, high optical quality (absorption coefficient a f 0.1-0.2 cm 21 ), single crystal samples [16][17][18] , due to its layered structure with weak interlayer, van der Waals type, bonding 9 . With careful preparation, it is possible to produce optical quality surfaces along the (0001) direction, which is orthogonal to the c-axis 6 .…”

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Crystal Growth and Sample Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…The starting materials for the synthesis were Ga 99.9997, Se 99,99 and S 99.95, which were additionally purified by remelting in a continuously evacuated ampoule. We preferred to use single zone furnace with gradual moving of the ampoule inside 25 . This technique seems to be very reliable, because one may estimate the vapor pressure inside the ampoule visually by its color.…”

Section: Crystal Growthmentioning

confidence: 99%

“…Growth oven with heat field rotation was used to make melt uniform and crystallization front thinner and finally grown crystals of high optical quality. Other details on the growth process used can be find elsewhere 25,26 . Visual inspection of as-grown crystals didn't show any color differences between initial and final sections of boules.…”

Section: Crystal Growthmentioning

confidence: 99%

“…GaSe is cheap in synthesis and can be manufactured as centimeter size samples. 6 Unfortunately, poor mechanical properties (measured hardness is almost "0" in Mohs scale) and relatively low optical quality (absorption coefficient ≥ 0.1-0.2 cm -1 at main transparency window and over 0.5 cm -1 at frequencies over 1 THz) caused by the layered structure and technologically uncontrolled point and micro defects have so far kept back commerce applications.…”

Section: Introductionmentioning

confidence: 99%

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Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

et al. 2015

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Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe & GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm 2 for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.

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