Фотопроводимость монокристаллов слоистого полупроводника p-GaSe, легированного редкоземельными элементами, и многодиапазонный фотоприемник света на их основе

Abstract

The main characteristics of intrinsic photoconductivity and the spectra of negative photoconductivity induced by impurity photoconductivity, infrared quenching of intrinsic photoconductivity in doped REE (gadolinium and dysprosium) at N = 0−10−1 at%, p-GaSe single crystals are experimentally investigated. It is shown that the instability and irreproducibility of the photoelectric characteristics of this semiconductor are due to fluctuations in the electronic potential associated with the presence of random macroscopic defects. The dependence of photoelectric parameters and characteristics on N, as well as ensuring a high degree of their stability and reproducibility at N ≈ 10−1 at%, are associated with the corresponding changes in the fluctuations of the electronic potential and the fraction of covalent bonds between the layers, depending on N. Shown is the possibility of creating a multi-range photodetector of light with stable, reproducible parameters and characteristics based on p-GaSe<REE> at N = 10−2−10−1 at%.