Microfluidic solution-processed organic and perovskite nanowires fabricated for field-effect transistors and photodetectors

Chen, Pingan; Guo, Jing; Nouri, Mahtab; Tao, Quanyang; Li, Zhiwei; Li, Qianyuan; Du, Lulu; Chen, Huajie; Dong, Zaizai; Chang, Lingqian; Liu, Yuan; Liao, Lei; Hu, Yuanyuan

doi:10.1039/c9tc05628a

Cited by 18 publications

(17 citation statements)

References 62 publications

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“…(f) Comparison of the transfer characteristics ( I ds – V gs ) of MAPbI 3 /N2200 NW heterojunction transistors and pure N2200 NW transistors. Adapted with permission from ref . Copyright 2020 Royal Society of Chemistry.…”

Section: Potential Applications Of Perovskite Nanowiresmentioning

confidence: 99%

“…Interestingly, the fabricated hybrid transistor exhibited long-term stability. Similarly, MAPbI 3 /organic semiconductor (OSC) (PDVT-10 and N2200) NW heterojunction-based transistors and phototransistors were fabricated Figure d shows a schematic of the bottom-gate and bottom-contact FET with a channel consisting of MAPbI 3 /OSC NW heterojunctions.…”

Section: Potential Applications Of Perovskite Nanowiresmentioning

confidence: 99%

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Perovskite Nanowires for Next-Generation Optoelectronic Devices: Lab to Fab

Kumar

Sumukam

Rajaboina

et al. 2022

ACS Appl. Energy Mater.

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The minuscule sizes of one-dimensional (1D) nanostructures have revolutionized photonic circuitry and led to efficient optoelectronic devices with unprecedented speed. With the impressive progress accomplished in consideration of pressing challenges, perovskite materials have been in the spotlight in research. The low-dimensional perovskites (especially nanowires) supersede their bulk counterparts with remarkable optoelectronic properties that make them suitable to be used in a broad range of applications. Nevertheless, for realizing any potential application, mechanistic insights on the crystal growth, especially the ordering/ orientation and hence the underlying physics of light−matter interactions in the perovskite nanowires, are needed, and research is yet to plateau. Herein, we emphasize the fundamental understanding of formation mechanisms and anticipated challenges along with the progressive evolutions of several blossoming candidates in exciting optoelectronic applications such as photodetectors, lasers, light-emitting diodes, photovoltaic cells, and field-effect transistors. Importantly, the perspectives offered in this Review can stimulate future research directions and opportunities that could pave the way for ambient-stable next-generation optoelectronic devices.

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Section: Potential Applications Of Perovskite Nanowiresmentioning

confidence: 99%

Section: Potential Applications Of Perovskite Nanowiresmentioning

confidence: 99%

Perovskite Nanowires for Next-Generation Optoelectronic Devices: Lab to Fab

Kumar

Sumukam

Rajaboina

et al. 2022

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

show abstract

“…A flexible photo FET was reported using the same MAPbI 3 perovskite channel in [ 117 ]. It was also shown that the MAPbI 3 nanowires in the channels improved the transfer characteristics of the pure polymer-based phototransistors [ 111 ]. Despite the superior photoconductive gain and possibility of a photo-modulated current in the perovskite channel, the application of perovskite photo FET has not been explored much in the past.…”

Section: Applications Of Perovskite Fetsmentioning

confidence: 99%

Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

et al. 2022

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Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

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“…Nowadays, various methods (such as the template method, chemical vapor deposition (CVD), and solution method) have been developed to construct perovskite NMW-based optoelectronic devices (including photodetectors, lasers, solar cells, and light-emitting diodes (LEDs)). [10][11][12][13][14][15] The ability to both control and reproduce the size, density, and crystal quality of perovskite NMWs is essential for realizing high-performance optoelectronics. To date, there have been a number of reviews focusing on low-dimensional perovskites in the literature.…”

Section: Introductionmentioning

confidence: 99%