Abstract:Compared to perovskite film-based devices, the excellent optoelectronic performance of perovskite NMW-based devices is mainly attributed to their high crystallinity, low recombination, directional charge transport caused by their well-defined crystal structure, few grain boundaries, low defect concentration, long
“…Perovskites have been widely employed in optoelectronic fields due to their strong light absorption and high carrier mobility. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ] With the realization of high‐performance perovskite devices in the laboratory, commercial applications are also highly desired. Commercial perovskite devices demand a production line with mature techniques and a high reproduction rate to satisfy the modern industry.…”
Perovskite is an attractive building block for future optoelectronic applications. However, the strict fabrication conditions of perovskite devices impede the transformation of lab techniques into commercial applications. Here, a facile annealing-free posttreatment is proposed to reconstruct the perovskite film to obtain high-performance photodetectors with an optimized production rate. With posttreatment by methylamine thiocyanate, the prefabricated formamidinium-lead triiodide (FAPbI 3 ) film will undergo a recrystallization process consisting of a repeating phase-transition-cycle (PTC) between the black and yellow phases of FAPbI 3 , which improves the crystal quality and eliminates defects. As a result, some casually prepared or even decomposed perovskite films can be reconstructed, and the dispersion degree of the device performance based on the posttreatment method decreases by ≈21% compared to the traditional antisolvent method. This facile and annealing-free posttreatment will be an attractive method for the future industrial production of perovskite devices.
“…Perovskites have been widely employed in optoelectronic fields due to their strong light absorption and high carrier mobility. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ] With the realization of high‐performance perovskite devices in the laboratory, commercial applications are also highly desired. Commercial perovskite devices demand a production line with mature techniques and a high reproduction rate to satisfy the modern industry.…”
Perovskite is an attractive building block for future optoelectronic applications. However, the strict fabrication conditions of perovskite devices impede the transformation of lab techniques into commercial applications. Here, a facile annealing-free posttreatment is proposed to reconstruct the perovskite film to obtain high-performance photodetectors with an optimized production rate. With posttreatment by methylamine thiocyanate, the prefabricated formamidinium-lead triiodide (FAPbI 3 ) film will undergo a recrystallization process consisting of a repeating phase-transition-cycle (PTC) between the black and yellow phases of FAPbI 3 , which improves the crystal quality and eliminates defects. As a result, some casually prepared or even decomposed perovskite films can be reconstructed, and the dispersion degree of the device performance based on the posttreatment method decreases by ≈21% compared to the traditional antisolvent method. This facile and annealing-free posttreatment will be an attractive method for the future industrial production of perovskite devices.
“…[124,107] Newly-developed functional materials that integrate not only charge extraction ability but also encapsulating property, as well as defect passivation, are highly desired to simultaneously improve photovoltaic performance and device stability. [125,126] The long-term stability of PSCs remains a great challenge for commercial application in the future, [127][128][129][130][131] especially when operated in harsh conditions with a high temperature, high humidity, and exposure under solar illumination with high-energy UV photons. [21] In a typical n-i-p structured device configuration, the HTL stacks on top of the perovskite film and the direct contact with an ambient condition serves as a protecting layer to some extent for the vulnerable light-active materials.…”
Perovskite solar cells (PSCs) have undergone unprecedented growth in the past decade as an emerging photovoltaic technology. Up till now, the power conversion efficiency of PSCs has exceeded 25% that rivals silicon solar cells and there is still room for further enhancement. However, the development in long‐term stability lags far behind, which remains a great concern for the commercial application in the future. The device instability mainly arises from the functional components, including perovskite film, charge transport layers, and electrodes along with the involved interfaces. As the most widely studied hole transport layer at the current stage, 2,2′,7,7′‐tetrakis(N,N‐di(4‐methoxyphenyl)amino)‐9,9‐spirobifluorene (Spiro‐OMeTAD) helps contribute to the achievement of record efficiency but it weakens the device stability due to the doping‐induced side effects such as hygroscopicity and ion migration. Great efforts are devoted to boosting the stability of Spiro‐OMeTAD while maintaining excellent photovoltaic performance. In this review, the fundamental properties of Spiro‐OMeTAD have been summarized and the recent advances in engineering Spiro‐OMeTAD‐based hole transport layer for the sake of highly efficient PSCs with enhanced longevity are highlighted. In the end, an outlook for the further optimization of Spiro‐OMeTAD is provided and the issues related to large‐scale production are discussed.
“…Metal halide perovskites have the general chemical formula of ABX 3 , where A is an organic or inorganic cation, such as methylammonium (MA), formamidinium (FA), or cesium (Cs), B is typical lead (Pb) or tin (Sn) cation, and X is a monovalent halide anion, such as chlorine (Cl), bromine (Br), iodine (I), or their mixtures. [31][32][33] While high-performance photodetectors based on Pb halide perovskites have been realized, [34][35][36][37][38] the response edge of those perovskite photodetectors is generally below 800 nm, which is limited by the perovskite bandgap energies. In comparison, Sn-based perovskites present larger response edges due to their smaller bandgaps.…”
Highly sensitive broadband photodetectors are critical to numerous cutting‐edge technologies such as biomedical imaging, environment monitoring, and night vision. Here, phototransistors based on mixed Sn/Pb perovskites are reported, which demonstrate ultrahigh responsivity, gain and specific detectivity in a broadband from ultraviolet to near‐infrared region. The interface properties of the perovskite phototransistors are optimized by a special three‐step cleaning‐healing‐cleaning treatment, leading to a high hole mobility in the channel. The highly sensitive performance of the mixed Sn/Pb perovskite phototransistors can be attributed to the vertical compositional heterojunction automatically formed during the film deposition, which is helpful for the separation of photocarriers thereby enhancing a photogating effect in the perovskite channel. This work demonstrates a convenient approach to achieving high‐performance phototransistors through tuning compositional gradient in mixed‐metal perovskite channels.
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