Microelectromechanical HF resonators fabricated using a novel SOI-based low-temperature process

Ruther, Patrick; Bartholomeyczik, J.; Buhmann, Alexander; Trautmann, Alain; Steffen, Kay; Oliver, Paul

doi:10.1109/jsen.2005.851009

Cited by 8 publications

(5 citation statements)

References 16 publications

(34 reference statements)

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“…Some of the commonly used designs are cantilevers [1], bridges [2], rings [3] and discs [4]. Due to their high Q-factors (10s of thousand) and small size, these resonators are often used as filters in RF devices replacing the conventional bulky quartz crystals.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and testing of hemispherical MEMS wineglass resonators

Pai

Chowdhury

Pourzand

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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This work focuses on understanding the behavior of 3D hemispherical shells operating in wineglass resonance mode through finite element modeling (FEM). Fabrication of the hemispherical shells was done using micromachining technique. The quality factor of the device was in excess of 10,000 when operated in 50mT vacuum. The shell showed better than 95% sphericity and had an rms surface roughness of ~5nm. The separation in the degenerate frequencies of 4-node wineglass resonance was 5 Hz at a resonant frequency of 22 kHz. Modeling of the device behavior relates the frequency mismatch to the asymmetry in the shell and quantifies it.

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Section: Introductionmentioning

confidence: 99%

Fabrication and testing of hemispherical MEMS wineglass resonators

Pai

Chowdhury

Pourzand

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…Single crystal silicon (SCS) and polysilicon are usually used as the structural material for micromechanical resonators [5,6]. In comparison with polysilicon, SCS has lower internal frictional loss and consequently higher mechanical quality factor (Q) [7,8]. Therefore, SCS appears more attractive as the structural material for microresonators.…”

Section: Introductionmentioning

confidence: 99%

“…A variety of SCS micromechanical resonators have been so far reported in the literature [7,8,[10][11][12][13]. In each of these cases, the micromechanical resonators are fabricated using silicon-on-insulator (SOI) substrates.…”

Section: Introductionmentioning

confidence: 99%

A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Xiong

et al. 2012

J. Micromech. Microeng.

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A cavity-silicon-on-insulator (SOI)-based single crystal silicon (SCS) micromechanical resonator has been demonstrated in this paper. The most distinguishing feature of this method is that it solves the restrictions of being released from the sacrificial layer. The resonator structures can be fabricated and released in one step using dry anisotropic etching. The differential drive, single-ended sense configuration is implemented to measure the electrical characterization of the fabricated resonator. The fabricated square plate resonator has been excited in the Lame´ mode at a resonant frequency of 4.126 MHz and exhibits a quality factor (Q) as high as 5.49× 106 at a pressure of 0.05 mbar. This result corresponds to a frequency–Q product of 2.27× 1013, which is the highest value demonstrated to date for silicon-based resonators as far as we know. The dependence of Q and resonant frequency on the operating pressure is measured and characterized. The temperature stability of the device is also demonstrated, with the temperature coefficient of resonant frequency less than −20.8 ppm °C−1 in the temperature range from −10 to 60 °C. The high performance of the resonator not only benefits from the superior performance of SCS as a mechanical material, but also the merit of the cavity-SOI structure.

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“…[4][5][6][7] In photonics, the large refractive index contrast between silicon and air ͑⌬n ϳ 2.5͒ enables the development of novel integrated optical devices, including photonic crystals. [4][5][6][7] In photonics, the large refractive index contrast between silicon and air ͑⌬n ϳ 2.5͒ enables the development of novel integrated optical devices, including photonic crystals.…”

Section: Introductionmentioning

confidence: 99%

Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches

Pruessner¹,

Rabinovich²,

Stievater³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching J. Vac. Sci. Technol. B 30, 06FF02 (2012); 10.1116/1.4755835 Cryogenic inductively coupled plasma etching for fabrication of tapered through-silicon vias J. Vac. Sci. Technol. A 28, 719 (2010); 10.1116/1.3281005 Model for aspect ratio dependent etch modulated processing J. Vac. Sci. Technol. A 28, 334 (2010); 10.1116/1.3305716Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing A cryogenic etch process using low temperature ͑T ഛ −100°C͒ and SF 6 and O 2 gases is presented for fabricating high aspect ratio silicon microstructures, including photonic devices and micro-and nanoelectromechanical systems. The process requires only a single electron beam resist mask and results in open area etch rates of 4 m / min. Various etch process parameters, including O 2 flow, rf forward power, substrate temperature, and chamber pressure were studied, and the resulting effect on the etch quality was evaluated in terms of sidewall verticality and surface roughness. The optimized process uses low temperature ͑T =−110°C͒ and low chamber pressure ͑P = 7 mTorr͒ and enables sidewall verticality greater than 89.5°with roughness of 1 -10 nm. A silicon etch selectivity of 26:1 was obtained for 380 nm thick electron beam resist. Using the optimized process, a silicon-on-insulator Fabry-Pérot optical cavity with integrated rib waveguides and deeply etched silicon/air distributed Bragg reflector mirrors was fabricated and tested. The device exhibits sharp resonance peaks with full width at half maximum ⌬ = 0.45 nm, free-spectral range of 26 nm, finesse F = 58, and quality factor Q = 3400 ͑at 0 = 1531.6 nm͒. The optical measurements and extracted mirror reflectance ͑R Ϸ 95% ͒ confirm the high quality of our optimized etch process.

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Microelectromechanical HF resonators fabricated using a novel SOI-based low-temperature process

Cited by 8 publications

References 16 publications

Fabrication and testing of hemispherical MEMS wineglass resonators

Fabrication and testing of hemispherical MEMS wineglass resonators

A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches

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