A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Wu, Guoqiang; Xu, Dehui; Xiong, Bin; Wang, Yuelin

doi:10.1088/0960-1317/22/2/025020

Cited by 27 publications

(11 citation statements)

References 29 publications

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“…Remaining problems that prevent wider practical application are: high series resistance, insufficient power handling, and significant dependence of Q on pressure (necessitates vacuum packaging). [7] (with permission of the author), b) [8], d) [9], e) [10], f) [11]), and bulk-mode resonators (c) [12], g) [13], h) [14] © IOP Publishing. Reproduced with permission.…”

Section: A Rf Mems Resonatorsmentioning

confidence: 99%

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RF MEMS and NEMS components and adsorption-desorption induced phase noise

Jokić

Frantlović

Djurić

2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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Radio frequency micro-and nanoelectromechanical systems (RF MEMS and RF NEMS) and technologies have a great potential to overcome the constraints of conventional IC technologies in realization of fully integrated transceivers of next generation wireless communications systems. During the last two decades a considerable effort has been made to develop RF MEMS/NEMS resonators so that they could replace conventional bulky off-chip resonators in wireless transceivers. In MEMS, and especially in NEMS resonators, additional noise generating mechanisms exist that are characteristic for structures of small dimensions and mass, and high surface to volume ratio. One such mechanism is the adsorption-desorption (AD) process that generates the resonator frequency (phase) noise. In the first part of this paper a short overview of RF MEMS resonators is given, including comments on the necessary improvements and the direction of future research in this field (especially having in mind the need for NEMS resonators), with the intention to optimize RF MEMS and NEMS components according to requirements of both current and future systems. The main part of the paper presents a comprehensive theory of AD noise in MEMS/NEMS resonators. Apart from having a theoretical significance, the derived models of AD noise in multiple different cases of adsorption are also a useful tool for the design of optimal performance RF MEMS and NEMS resonators. The model of the MEMS/NEMS oscillator phase noise that takes into account the influence of AD noise is presented for the first time.

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Section: A Rf Mems Resonatorsmentioning

confidence: 99%

“…The corresponding PSDs of θ, denoted with S θ,B (f), S θ,1/f (f) and S θ,AD (f), are obtained using Eqs. (11), (12), (14) and (15). The total S θ (f) is their convolution in the frequency domain, and the oscillator phase noise, which includes the influence of the AD noise, is then obtained from Eq.…”

Section: B Phase Noise In Rf Mems/nems Oscillatorsmentioning

confidence: 99%

RF MEMS and NEMS components and adsorption-desorption induced phase noise

Jokić

Frantlović

Djurić

2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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“…(7,8) One possible solution to this impedance problem is to use piezoelectric materials, such as AIN, whose impedance is below 80 Ω, and the Qs are below 2900. (9) For a single MEMS resonator, increasing the sensing capacitance is also one of the methods to reduce the motional impedance, for example, increasing the thickness of a disk fabricated by deep reactive-ion eching (DRIE), (10,11) or decreasing the electrode-to-resonator gap. (12) However, the motional impedance increases linearly with increasing frequency, (13) and when the frequency is in the ultrahigh frequency (UHF) range, the method of only increasing the thickness or reducing the gap is generally insufficient if a 50 Ω matching impedance is desired.…”

Section: Introductionmentioning

confidence: 99%

Inclination Effects on Voltage-controlled Tuning of MEMS Disk Resonator Array Composite Fabricated by Deep Reactive Ion Etching Process

Yan¹,

Bao²,

Quan³

et al. 2018

Sensors and Materials

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Capacitive micro-electromechanical system (MEMS) disk resonators fabricated by deep reactive-ion etching (DRIE) have large sensitive capacitances and low motional resistances. However, for the MEMS disk structure with a high aspect ratio, the cross section takes on a trapezoidal profile, which will affect the performance of the resonator. In this study, we firstly analyzed the electrostatic tuning mechanism of electrical stiffness produced by the electrostatic force, and the dependence of resonance frequency variation on the inclination angle and dc bias voltage is obtained and the electromechanical coupling strength was changed owing to the inclination angle. Secondly, after analyzing the feasibility of overcoming the inclination effect by introducing a tuning disk array, the optimal tuning voltage of the inclined disk resonator array and the scale of the array with a small motional resistance can be obtained. The results show that, for an array with the same inclination angle of 0.1° and biased at 10 V, when the tuning voltage is 20 V, the relative error of the resonance frequency can be reduced to 12.4 ppm. In addition, the optimal tuning voltage increases as the inclination angle increases, and when the inclination angle is 0.3°, the optimal tuning voltages are 28.68 and 57.35 V for the dc bias voltages of 10 and 30 V, respectively. If the motional resistance needs be reduced to 50 Ω, the integrated number of disk resonators will increase to 1048, and the optimal tuning voltage can reach 37.5 V. These results can provide some theoretical basis for the large-scale integration of the disk resonator array in the future.

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“…Much attention has been focused on microelectromechanical system (MEMS) resonators due to their wide range of applications in timing and radio frequency (RF) wireless communications for serving as timing references and bandpass filters 1,2 . Surface acoustic wave (SAW) resonators have been dominating the RF filter market due to their low cost, small size and good performance.…”

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confidence: 99%

GHz spurious mode free AlN lamb wave resonator with high figure of merit using one dimensional phononic crystal tethers

Zhu

Merugu

et al. 2016

Applied Physics Letters

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This letter reports a spurious mode free GHz aluminum nitride (AlN) lamb wave resonator (LWR) towards high figure of merit (FOM). One dimensional gourd-shape phononic crystal (PnC) tether with large phononic bandgaps is employed to reduce the acoustic energy dissipation into the substrate. The periodic PnC tethers are based on a 1 µm-thick AlN layer with 0.26 µm-thick Mo layer on top. A clean spectrum over a wide frequency range is obtained from the measurement, which indicates a wide-band suppression of spurious modes. Experimental results demonstrate that the fabricated AlN LWR has an insertion loss of 5.2 dB and a loaded quality factor (Q) of 1893 at 1.02 GHz measured in air. An impressive ratio of the resistance at parallel resonance (R p) to the resistance at series resonance (R s) of 49.8 dB is obtained, which is an indication of high FOM for LWR. The high R p to R s ratio is one of the most important parameters to design a RF filter with steep roll-off.

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A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Cited by 27 publications

References 29 publications

RF MEMS and NEMS components and adsorption-desorption induced phase noise

RF MEMS and NEMS components and adsorption-desorption induced phase noise

Inclination Effects on Voltage-controlled Tuning of MEMS Disk Resonator Array Composite Fabricated by Deep Reactive Ion Etching Process

GHz spurious mode free AlN lamb wave resonator with high figure of merit using one dimensional phononic crystal tethers

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