2006
DOI: 10.1016/j.jnoncrysol.2005.11.144
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Microcrystalline silicon–germanium alloys for solar cell application: Growth and material properties

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Cited by 39 publications
(29 citation statements)
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“…This approach makes it possible to significantly reduce the amount of the semiconductor material in the finished product, as compared with the production of conventional waferbased cells [2]. Thin-film silicon-based solar cells are commonly fabricated using plasma-enhanced chemical vapor deposition, electron beam evaporation, hot filament-assisted deposition, magnetron sputtering, and some other approaches that are compatible with the present-day microelectronic manufacturing processes [3][4][5][6]. These approaches are rapidly gaining momentum with the continuously increasing use of nanostructured materials to enhance solar cell performance [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…This approach makes it possible to significantly reduce the amount of the semiconductor material in the finished product, as compared with the production of conventional waferbased cells [2]. Thin-film silicon-based solar cells are commonly fabricated using plasma-enhanced chemical vapor deposition, electron beam evaporation, hot filament-assisted deposition, magnetron sputtering, and some other approaches that are compatible with the present-day microelectronic manufacturing processes [3][4][5][6]. These approaches are rapidly gaining momentum with the continuously increasing use of nanostructured materials to enhance solar cell performance [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…Matsui et al [51], studied the Ge fraction as a function of GeH 4 concentration in the gas phase, defined as […”
Section: Hydrogenatedmentioning
confidence: 99%
“…Another approach is to increase the absorption coefficient of the absorber material by alloying silicon with germanium. Matsui et al introduced the usage of microcrystalline silicon germanium alloys (μc-SiGe:H) with increased absorption coefficient compared to μc-Si:H [4,5].…”
Section: Introductionmentioning
confidence: 99%