Microcrystal modulated exciton-polariton emissions from single ZnO@ZnO:Ga microwire

Abstract

Due to their outstanding surface-to-volume ratio, highly smooth surface, and well-defined crystal boundary, semiconducting micro-/nanocrystals have been used as a pivotal platform to fabricate multifunctional optoelectronic devices, such as superresolution imaging devices, solar concentrators, photodetectors, light-emitting diodes (LEDs), and lasers. In particular, micro-/nanocrystals as key elements can be employed to tailor the fundamental optical and electronic transport properties of integrated hetero-/homostructures. Herein, ZnO microcrystal-decorated pre-synthesized Ga-doped ZnO microwire (ZnO@ZnO:Ga MW) was prepared. The single ZnO@ZnO:Ga MW can be used to construct optically pumped Fabry–Perot (F–P) mode microlasers, with the dominating lasing peaks centered in the violet spectral region. Stabilized exciton-polariton emissions from single ZnO@ZnO:Ga MW-based heterojunction diode can also be realized. The deposited ZnO microcrystals can facilitate the strong coupling of F–P optical modes with excitons, leading to the formation of exciton-polariton features in the ZnO@ZnO:Ga MW. Therefore, the waveguiding lighting behavior and energy-band alignment of ZnO microcrystal-sheathed ZnO:Ga MW radial structures should be extremely attractive for potential applications in semiconducting microstructure-based optoelectronic devices, such as micro-LEDs, laser microcavities, waveguides, and photodetectors.

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

“…Thereby, a single MW based heterojunction diode was fabricated. 6,23,40,42,43 Analysis instruments Single ZnO:Ga MWs, Ag nanostructures, and MWs covered by Ag nanostructures were characterized using scanning electron microscopy (SEM). The current-voltage (I-V) characteristics of the single MW based metal-MW-metal structure and the single MW based heterojunction diode were investigated using a Keysight semiconductor device analyzer (B1500A).…”

An electrically driven exciton–polariton microlaser diode based on a ZnO:Ga microribbon heterojunction

“…As a bosonic quasiparticle, exciton-polariton (EP) can achieve coherent light in the absence of population inversion, which provides a new feasible solution for constructing low-threshold or even thresholdless electrically driven low-dimensional coherent light sources. [25][26][27] Until now, light-driven EP lasers have been demonstrated from many semiconductors. [27][28][29][30][31] The strong light-driven coupling between light and matter reveals the rich physical significance and connotation of EP lasing, which provides a good idea for further constructing electrically driven EP lasers.…”

Exciton–polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures

“…27,35–37 Nevertheless, restricted by the preparation of highly-crystallized 1D semiconductor superlattice micro/nanowires, research on constructing electrically driven exciton–polariton light-emitting/lasing devices with large exciton–photon coupling strength has been rarely reported. 38–40…”

“…27,[35][36][37] Nevertheless, restricted by the preparation of highly-crystallized 1D semiconductor superlattice micro/nanowires, research on constructing electrically driven exciton-polariton light-emitting/lasing devices with large excitonphoton coupling strength has been rarely reported. [38][39][40] In this paper, a sample of individual superlattice microwires comprising Ga-doped ZnO and undoped ZnO with periodically alternating crystalline layers (ZnO/ZnO:Ga MWs) was successfully synthesized using a chemical vapor deposition (CVD) method. Upon optical excitation, photoluminescence (PL) results of a ZnO/ZnO:Ga superlattice MW demonstrated a series of asymmetric resonance multipeaks, and the mode spacing gradually increased towards the larger wavelengths.…”