Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

Abstract

In this work, a single Ga-doped ZnO microwire prepared with large-sized Ag nanoparticle deposition (AgNPs@ZnO:Ga MW) was utilized to construct a high-performance heterojunction diode, with p-GaN serving as the hole injection layer.

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

“…As we previously literature reported, individual ZnO:Ga MWs were synthesized with the vapor transport deposition method. 22,38 High-purity powders of ZnO, Ga 2 O 3 and graphite (C) with the weight ratio of 9:1:10 serving as the precursors, was placed in a corundum boat (the size of 20 cm (length) × 2 cm (width) × 1.5 cm (depth)). A cleaned Si crystal wafer (without any catalyst coating, and the size of 2 cm (length) × 2 cm (width)) was placed on the top of the mixture to collect the products.…”

“…As previously reported, the as-grown ZnO:Ga wires with straight sidewalls, hexagonal cross-section and good crystallinity have been successfully fabricated through one-step vapor transport deposition method. 22,38 The optical picture of the synthesized samples is exhibited in Fig. 1(a).…”

“…Clearly, the dominating EL peaks locate at ∼ 680 nm, originating from the depletion layer around the heterointerface of ZnO:Ga wire and p-Si crystal wafer. 7,22 To research the influence of AgNWs on the device performance, the same wire deposited with AgNWs was further applied to construct the device, and the I-V curve was measured, as exhibited in Fig. 2(b) (the blue solid line).…”

“…[17][18][19][20] Profit from the direct band structure, excellent optoelectronic properties, and controlled fabrication routes, ZnO (the bandgap ∼ 3.37 eV, large excitation binding energy ∼ 60 eV at room temperature), attracts tremendous potential as a candidate for preparing high-performance heterostructural optoelectronic devices, by combing other p-type semiconductor materials at the absence of steady, reliable and repeatable p-type ZnO. 13,[21][22][23][24][25] Currently, rapid advances in ZnO/Si-based heterojunction have made it possible to modulate the optoelectronic performance, and great efforts have been conducted to fabricating ZnO/Si optoelectronic devices, like light source, photodiode, and solar cell, etc. Because of the limitation of Si materials and technology, it is remain a severe challenge to developing high-performance Si-based optoelectronic devices, especially for high-efficiency LEDs and photodetectors.…”

Nanoplasmonics in High Pressure Environment

“…During the past decade, nanoplasmonics was employed for the production of photovoltaic devices [1][2][3][4][5][6], optical devices [7][8][9][10][11][12][13][14][15], and biosensors [16][17][18][19][20]. Additionally, nanoplasmonics enabled the enhancement of photocatalysis [21][22][23], the luminescence upconversion enhancement [24,25], and the optical tuning of luminescence and upconversion luminescence [26,27].…”