Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures

Macherzyński, W.; Stafiniak, Andrzej; Paszkiewicz, B.; Gryglewicz, J.; Paszkiewicz, R.

doi:10.1002/pssa.201532684

Cited by 9 publications

(8 citation statements)

References 17 publications

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“…To perform experiments, the structures of the metal-sublayer-semiconductor plate type were formed. Aluminum was the main current-carrying layer because it is the most extended material used for metallization layers in semiconductor structures (Diligenti et al, 1989 (Macherzyński et al, 2016;Mwema et al, 2018). The substrate temperature (T = 373 К) and working pressure (p = 710 -4 Pа) were maintained constant in the course of film deposition.…”

Section: Methodsmentioning

confidence: 99%

“…As a result, starting from a certain integration level of semiconductor devices, signal delays in the interconnections may exceed those in the structures themselves. In addition, as the semiconductor cross-sections decrease, the problems appear that are related to electromigration in thin metal films and contact ohmicity (Kang et al, 2008;Martineau et al, 2014;Macherzyński et al, 2016;De Rose et al, 2018;Homa and Sobczak, 2019;Eslami et al, 2019;Fischer et al, 2019;Chawla et al, 2019;Cruz et al, 2019;Yi et al, 2019). And technological complexities when making modern metallization systems (including the structures involving p-n junctions with small occurrence depth) should also be noted (Garosshen et al, 1985;Macherzyński et al, 2016).…”

Section: Introductionmentioning

confidence: 99%

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Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Скворцов¹,

Koryachko²,

Zuev³

et al. 2020

PTQ

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In recent years, much attention of developers of integrated microcircuits is given to designing novel types of microprocessors, development, and mastery of technologies of both multilayer 3D integrated circuits and making devices based on complex semiconductors. The aim of the present work is to study thermal processes in the Al-Ti-Si multilayer system up to the development of degradation processes. The degradation issues in aluminum metallization with titanium sublayer deposited onto silicon surface are considered. The evolution of processes of irreversible destruction of film conductor under passage through it of single square-wave current pulses with energy up to 300 mJ and duration of 50…1000 μs was analyzed. It was found that, under the action of a single square-wave current pulse with a duration of no more than 80 μs and energy of 85 mJ, the priority process of structural damage is the melting of the metal film. Increasing pulse duration (τ > 80 μs) changes the priority of thermal degradation, and contact melting becomes the main mechanism of structure damage. It was also found that isothermal annealing leads to improving system heat-conducting properties and increasing critical current densities. This is related to the improvement of adhesion properties of the structure as well as with phase transformations in the Al-Ti-Si system in the course of annealing. The results of the article can be used in further studies of the properties of the AI-TI-SI system, as well as in the creation of semiconductor structures taking into account properties such as high electrical conductivity, good processability, the absence of chemical components in the Al-Si system, chemical stability, and a tendency to electromigration, the possibility of short circuit, high diffusion mobility, low melting point, the inability to attach the wire by soldering.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Скворцов¹,

Koryachko²,

Zuev³

et al. 2020

PTQ

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“…Roughness increased with annealing temperature for all samples, as could be expected. The roughness of annealed Ti/Al/Ni/Au ohmic metal stack is often reported to be much higher than a Ti/Al/Mo/Au or Ti/Al/Ti/Au due to the Ni-Al alloy aggregation in some areas [11]. Fig.…”

Section: Fabricationmentioning

confidence: 99%

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Benakaprasad

Eblabla

et al. 2020

IEEE Trans. Electron Devices

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In this study, we report the optimisation of ohmic contact formation on AlGaN/GaN on low resistivity silicon. To achieve this, a strategy of uneven AlGaN / GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs (holes, horizontal lines, vertical lines, grid) and varied etch depth (above and below the 2-dimensional electron gas) were investigated. Further, a study of planar and non-planar ohmic metallisation was investigated. Compared to a traditional fabrication strategy, we observed a reduced contact resistance from 0.35 Ω.mm to 0.27 Ω.mm by employing a grid etching approach with a "below channel" etch depth and non-planar ohmic metallisation. In general, measurements of "below channel" test structures exhibited improved contact resistance compared to "above channel" in both planar and non-planar ohmic metallisation.

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“…Таким образом, проведение процесса отжига контакта к n-слою при температу-рах 700-800 °C не оказывает влияния на характери-стики контакта к p-слою GaN. Однако также сооб-щается, что высокотемпературный отжиг приводит к скорейшей деградации контакта и уменьшению сро-ка службы светодиодного кристалла [6]. С другой стороны, современные тенденции развития свето-диодов и увеличение их рабочего тока требуют пе-рехода от планарной конструкции кристалла к вер-тикальной конструкции [7].…”

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Formation of the ohmic contact to the n-layer of gallium nitride using the pre-ionic treatment

Zasukhin¹,

Minin²,

Viktorova³

2017

Proceedings of TUSUR

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Формирование омического контакта к n-слою нитрида галлия с использованием предварительной ионной обработки Представлены результаты измерения удельного контактного сопротивления к n-слою нитрида галлия системы металлов Ti/Al/Ni/Au. Исследовано влияние параметров предварительной ионной обработки поверхности, а именно скорость расхода газа и время процесса на значение удельного контактного сопротивления. Впервые получена зависимость удельного контактного сопротивления от температуры отжига после проведения ионной обработки поверхности нитрида галлия. Ключевые слова: светодиод, нитрид галлия, омический контакт, ионная обработка.

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Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures

Cited by 9 publications

References 17 publications

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Degradation Processes in the Ai-Ti-Si System Under Thermal Shock

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Formation of the ohmic contact to the n-layer of gallium nitride using the pre-ionic treatment

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