Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Benakaprasad, Bhavana; Eblabla, Abdalla; Li, Xu; Crawford, Kevin G.; Elgaid, K.

doi:10.1109/ted.2020.2968186

Cited by 21 publications

(12 citation statements)

References 17 publications

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“…e threephase four-wire bidirectional inverter is completed by the traditional three-bridge arm and the split bus capacitor combined with the neutral bridge arm, in order to deal with the hidden dangers of the system caused by the voltage oscillation when the unbalanced load occurs. Because the DAB primary battery voltage is low, the selected SiC-MOSFET is SCT3022AL packaged with TO-247, and the SCT3030KL packaged with TO-247 is selected on the inverter side [8]. In order to make the system reach 97% efficiency, the design firstly conducts a double-pulse test on two SiC switches, the gate resistance is 2.7Ω and 2Ω, respectively, and the driving circuit is completed with a 4layer PCB.…”

Section: Systemmentioning

confidence: 99%

Main Circuit Topology and Electromagnetic Interference of Electric Vehicle Bidirectional Charger

Sun

Zhu

2022

Journal of Control Science and Engineering

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In order to improve the electromagnetic compatibility performance of electric vehicle bidirectional chargers, the authors propose a main circuit topology and electromagnetic interference of the electric vehicle bidirectional charger. The design adopts the parallel connection of silicon carbide (SiC) MOSFETs and completes the bidirectional charging system based on the cascade connection of dual active bridge (DAB) and three-phase four-wire inverter. This paper mainly analyzes the influence of parasitic inductance on the drive and power loop of the T0-247 packaged switch in actual use, and according to the operating characteristics of the system, different gate resistors are used to reduce switching losses and improve system efficiency. And, we explore on how to reduce the overshoot voltage through the RC absorption circuit, thereby reducing the conducted interference. The result shows the following: the primary side absorption circuit resistance is 470 Ω and the capacitor is 47 nf, the secondary side absorption circuit resistance is 40 Ω and the capacitance is 4.7 nf, and the circuit power is 5000 W. Under the same conditions, without adding the RC absorption circuit, the conducted interference on the AC side does not meet the standard, and the amount of disturbance is large. After adding a suitable RC absorption circuit, the conducted interference on the AC side reaches the required value. Conclusion. This research provides a systematic design scheme and optimization method for designing power electronic devices using SiC.

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Section: Systemmentioning

confidence: 99%

Main Circuit Topology and Electromagnetic Interference of Electric Vehicle Bidirectional Charger

Sun

Zhu

2022

Journal of Control Science and Engineering

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“…The lower contact resistance could be achieved by optimization of RTA process [10], upgrade of ohmic metal schemes [11], [12], the recess of the barrier layer in the ohmic regions [13], [14], deposition of Ge and/or Si prior to ohmic metal evaporation [15], [16], and heavily doping in the ohmic regions by ion implantation or regrown ohmic contact [17], [18]. Additionally, scaling down the source-drain distance and adoption of strongly polarized high-Al-content heterojunction are meaningful to the reduction of access resistance [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analysed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction as well as strongly polarized InAlN/GaN heterojunction, to make a comparison of low voltage RF power capability between two devices. Although it suffers from relatively severe RF dispersion, InAlN/GaN HEMT delivers higher output power density (Pout) than its opponent, benefiting from the lower parasitic resistance and knee voltage as well as higher output current density. At 8 GHz, Pout of 1.62 W/mm and 1.10 W/mm are achieved for InAlN/GaN and AlGaN/GaN HEMT, respectively, both of which are biased at class AB operation and Vds of 9 V. However, the tremendous degradation of power added efficiency (PAE) occurs as the higher drain voltage is applied on InAlN/GaN HEMT, as the result of the severe gate leakage. What is more, a higher PAE is more necessary than Pout for terminal applications. Either InAlN/GaN HEMT or AlGaN/GaN HEMT has its own specific voltage range to deliver higher PAE. Concretely, InAlN/GaN HEMT is more suitable to applications with operating voltage not exceeding 6 V, and AlGaN/GaN HEMT is preferred for ones with relatively higher voltage, accompanied by the decent PAE as high as 62% to 66% and moderate Pout to meet the demand of various low voltage terminal applications.

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“…2. GaN HEMT: these devices are based on Si wafers 142,143,162 (GaN-on-Si technology)**** on which their AlGaN/GaN thin layers are placed (Figure 11A). Unlike previous devices, GaN HEMTs are turned on by default (normally-on).…”

Section: Sic Diodesmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Cited by 21 publications

References 17 publications

Main Circuit Topology and Electromagnetic Interference of Electric Vehicle Bidirectional Charger

Main Circuit Topology and Electromagnetic Interference of Electric Vehicle Bidirectional Charger

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

The role of power device technology in the electric vehicle powertrain

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