2021
DOI: 10.1063/5.0048963
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Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model

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Cited by 7 publications
(21 citation statements)
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“…The reader is referred to corresponding comprehensive surveys by Brunton and Vinuesa et al 191,192 Concerning data-driven process control and MPC, it should be noted that the plasma information based VM methodology for LTP etching processes previously introduced may be adapted based on physical or data-driven model data. 19,20,193 Despite a possible discrepancy between models and reality, in particular systematic deviations may be straightforwardly taken into account in a data-driven approach by means of discrepancy learning. A learnable translation layer may suffice to capture and combine the relevant information by means of data-fusion.…”
Section: Data-driven Discharge Surrogate Modelingmentioning
confidence: 99%
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“…The reader is referred to corresponding comprehensive surveys by Brunton and Vinuesa et al 191,192 Concerning data-driven process control and MPC, it should be noted that the plasma information based VM methodology for LTP etching processes previously introduced may be adapted based on physical or data-driven model data. 19,20,193 Despite a possible discrepancy between models and reality, in particular systematic deviations may be straightforwardly taken into account in a data-driven approach by means of discrepancy learning. A learnable translation layer may suffice to capture and combine the relevant information by means of data-fusion.…”
Section: Data-driven Discharge Surrogate Modelingmentioning
confidence: 99%
“…15 Plasma virtual metrology (VM) was conducted based on multivariate sensor data, 16 with regard to real-time fault detection in reactive ion etching, 17 batch process characterization in semiconductor fabrication, 18 and a deep learning VM framework based on OES data 19 and "plasma information" descriptors. 20 Further examples have devised an inverse reconstruction of intrinsic plasma properties, such as the electron energy distribution function from OES diagnostics data 21 as well as an active learning guided scheme based on Fourier transform infrared spectroscopy data for parameter space exploration. 22 In contrast to these previous examples, which rely on the experimental and diagnostics data, the focus of this paper will be on data-driven aspects of plasma modeling and simulation.…”
Section: Introductionmentioning
confidence: 99%
“…They have been used to predict various process performances such as etch rate, deposition rate, defect particles, etching profile, deposited thin film quality, and spatial uniformity of the processed results. They have been applied to the control and management of the OLED mass production lines last six years [577][578][579][580][581][582][583].…”
Section: B Data-driven Approaches For Plasma-assistedmentioning
confidence: 99%
“…Developed PI-VM algorithms were applied to the mass production line of the OLED display manufacturing to solve four kinds of problems that occurred in the real field: The defect particle caused process fault prediction [578], root cause analysis of the high-aspect-ratio contact (HARC) etching process faults [579], the management of the mass production discontinuities with a proper application of the in-situ dry cleaning (ISD) [580], and the micro-uniformity problems in the process results [581]. These PI-VM models optimized for each issue have shown enough prediction accuracy to apply for the long-periodic mass production running.…”
Section: B Data-driven Approaches For Plasma-assistedmentioning
confidence: 99%
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