Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Nolan, M.; Perova, Tatiana S.; Moore, Robert A.; Moore, C. J.; Berwick, Kevin; Gamble, H.S.

doi:10.1016/s0921-5107(99)00454-7

Cited by 4 publications

(4 citation statements)

References 16 publications

(19 reference statements)

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“…Fourier Transform Infrared (FTIR) spectroscopy provides a direct probe of molecular and submolecular structures via the excitation of vibrational states in the molecules over a specific mid-IR range (400-5000cm -1 ) [1][2][3][4][5][6][7][8]. Raman spectroscopy has been utilised recently to investigate stress and phase transformation in silicon structures [9][10][11][12][13][14]. The greatest advantages of both these techniques are its non-destructive character, the simplicity of the equipment set-up and the short time required for obtaining data, with essentially no sample preparation process required and no surface damage.…”

Section: Introductionmentioning

confidence: 99%

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

et al. 2003

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In this work, SiO 2 and fluorine and phosphorous doped SiO 2 thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are also discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

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Section: Introductionmentioning

confidence: 99%

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

et al. 2003

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“…Several different wafers were prepared for the proximity rapid thermal processing options: rapid thermal oxidation and rapid thermal doping of 150 mm diameter Czochralski grown n-type silicon wafers [11,18]. The 001 oriented wafers used throughout the study possessed a nominal resistivity of 9-15 cm.…”

Section: Sample Preparationmentioning

confidence: 99%

“…The micro-Raman measurements [11] were performed in backscattering mode on a Renishaw Raman microscope system 1000. The 514.5 nm line of the Ar + laser, yielding stress information from a penetration depth of approximately 541 nm, at a power of 25 mW was used as the excitation source.…”

Section: Micro-raman Spectroscopymentioning

confidence: 99%

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Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

Lowney

Perova

Nolan

et al. 2002

Semicond. Sci. Technol.

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Thermal stress induced by rapid thermal oxidation (RTO) and rapid thermal doping (RTD) of 001 silicon wafers was analysed using micro-Raman spectroscopy and synchrotron x-ray topography. The RTO wafers exhibited elevated stress levels as the process time was increased. The maximum magnitude and topographical distribution of the strain was found to agree with theoretical predictions. A maximum compressive strain of 320 MPa was observed after 166 s of RTO. The introduction of boron into the silicon lattice via the RTD process enhanced the rate at which the stress in the wafer exceeded the yield stress. Stress relief was subsequently accomplished through the formation of slip and misfit dislocations. The thermally induced stress and dislocation density increased with the time spent at the process peak temperature.

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An in situ platform for the investigation of Raman shift in micro-scale silicon structures as a function of mechanical stress and temperature increase

Gan

Tomar

2014

Review of Scientific Instruments

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Raman spectroscopy provides an accurate approach to measure temperature and stress in semiconductors at micro-scale and nano-scale. In the present work an in situ experimentation-based approach to separate a measured room to high temperature Raman shift signal into mechanical and thermal components when a uniaxial compressive load is applied in situ is presented. In situ uniaxial compressive loads were applied on examined silicon cantilever specimens from room temperature to 150 °C. The Raman shift measurements were performed as a function of strain at constant temperature and as a function of temperature at constant strain levels. The results show that the Raman shift measured at a given temperature under a given level of applied stress can be expressed as a summation of stress-induced Raman shift signal and temperature-induced Raman shift signal measured separately. For silicon, the stress-induced Raman shift is caused by inelastic interaction between the incident laser and the vibration of crystal lattice, while the temperature-induced Raman shift is caused by the anharmonic terms in the vibrational potential energy. Analyses indicate that such separation of Raman shift signal can be used to measure localized change in thermal conductivity and mechanical stress of semiconductor structures under applied stress.

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Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Cited by 4 publications

References 16 publications

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

An in situ platform for the investigation of Raman shift in micro-scale silicon structures as a function of mechanical stress and temperature increase

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