Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

Lowney, D.; Perova, Tatiana S.; Nolan, M.; McNally, Patrick J.; Moore, Robert A.; Gamble, H.S.; Tuomi, T.; Rantamäki, R.; Danilewsky, A.N.

doi:10.1088/0268-1242/17/10/309

Cited by 13 publications

(7 citation statements)

References 24 publications

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“…Lowney et al, among others, demonstrated that Raman scattering is a very sensitive technique for the probing of local atomic environments of c-Si [8].…”

Section: Introductionmentioning

confidence: 99%

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Allen

Wittge²,

Zlotos³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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Abstract:In the semiconductor manufacturing industry, wafer handling introduces micro-cracks at the wafer edge. During heat treatment these can produce larger, long-range cracks in the wafer which can cause wafer breakage during manufacture. Two complimentary techniques, microRaman spectroscopy (μRS) and White Beam Synchrotron X-ray Topography (WBSXRT) were employed to study both the micro-cracks and the associated strain fields produced by nano-indentations in Si wafers, which were used as a means of introducing controlled strain in the wafers. It is shown that both the spatial lateral and depth distribution of these long range strain fields are relatively isotropic in nature. The Raman spectra suggest the presence of a region under tensile strain beneath the indents, which can indicate a crack beneath the indent and the data strongly suggests that there exists a minimum critical applied load below which cracking will not initiate. Introduction:

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“…Lowney et al, among others, demonstrated that Raman scattering is a very sensitive technique for the probing of local atomic environments of c-Si [8].…”

Section: Introductionmentioning

confidence: 99%

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Allen

Wittge²,

Zlotos³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…. 0.02 cm -1 [17,18]. In addition to the LO phonon in each spectrum a calibration line of an Hg lamp with frequency near the LO frequency was measured.…”

Section: Methodsmentioning

confidence: 99%

Micro‐Raman study of strain fields around dislocations in GaAs

Irmer

Jurisch

2007

Physica Status Solidi (a)

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The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed.

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“…Raman scattering is sensitive to the local atomic environment and can obtain information through the vibration of atoms. [ 28 ] The environment around a single atom renders a strong influence on its dynamics. In real crystals, the appearance of dislocations is often accompanied by the formation of other extended defects like GBs and other faults, which could have a great impact on the atomic environment.…”

Section: Observation Of Dislocationsmentioning

confidence: 99%

Dislocations in Crystalline Silicon Solar Cells

Wang,

Liu,

et al. 2023

Adv Energy and Sustain Res

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Dislocation is a common extended defect in crystalline silicon solar cells, which affects the recombination characteristics of solar cells by forming deep‐level defect states in the silicon bandgap, thereby reducing the lifetime of minority carrier. Hence, reducing the impact of defects on device performance is an effective strategy to optimize the performance of photovoltaic devices. This article reviews the observation and engineering of dislocation in Si solar cell. The structure and deformation of Si can be directly observed by chemical etching combined with electron microscopy. Also, more information about dislocation is obtained indirectly by monitoring the electrical and optical properties of Si. The classification, density, distribution of dislocations, and their interactions with other defects in Si can affect the lifetime of minority carriers and thereby reduce the performance of Si solar cells. In order to achieve higher cell efficiency, crystals with less or even no dislocation should be obtained. In addition to the specification of controlling the relevant parameters during the growth of silicon ingots to obtain the minimum dislocation density, it is necessary to study the behavior of dislocation in Si wafers under the combined action of external stress, temperature, and other defects.

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Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography

Cited by 13 publications

References 24 publications

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Micro‐Raman study of strain fields around dislocations in GaAs

Dislocations in Crystalline Silicon Solar Cells

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