An <i>in situ</i> platform for the investigation of Raman shift in micro-scale silicon structures as a function of mechanical stress and temperature increase

In Situ D efo rm atio n of S ilicon C an tilever U nder Constant Stress as a Function of T e m p eratu reThis research reports in situ creep properties of silicon microcantilevers at temperatures ranging from 25 °C to 100°C under uniaxial compressive stress. Results reveal that in the stress range o f50-150MPa, the strain rate of the silicon cantilever increases linearly as a function of applied stress. The strain rate (0.2-2.5 xlO~6s~I) was comparable to lit erature values for bulk silicon reported in the temperature range of 1100-1300°C at one tenth o f the reported stress level. The experiments quantify the extent of the effect of sur face stress on uniaxial creep strain rate by measuring surface stress values during uniax ial temperature dependent creep.

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“…The detail of the stress measure ment is discussed elsewhere [34], Fig . The detail of the stress measure ment is discussed elsewhere [34], Fig .…”

Section: Fig 7 S Tre S S E X P O N E N T At 2 5 C 50 °C a N D 100 Cmentioning

confidence: 99%

In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature

Gan

Zhang

Tomar

2014

Journal of Nanotechnology in Engineering and Medicine

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“…For example, the nanomechanical Raman spectroscopy approach developed by the authors will be used. [22][23][24] …”

Section: Introductionmentioning

confidence: 98%

Evaluation of Incoherent Interface Strength of Solid-State-Bonded Ti64/Stainless Steel Under Dynamic Impact Loading

Verma

Singh

Varma

et al. 2015

JOM

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Ti/steel interfaces are produced using field-assisted sintering technology, a technique known to bring about full consolidation of materials using much lower sintering temperatures and durations. The interface thickness is verified using the energy-dispersive x-ray analysis exhibiting the extent of diffusion in interface regions. The interface mechanical strength is characterized using dynamic indentation experiments at strain rates approaching 400 s À1 . The experiments were conducted on the interfaces within the spatial error tolerance of less than 3 lm. The measurements of dynamic hardness values, strain rates, and plastic-residual depths were correlated to show the relation of interface mechanical strength with the bulk-phase mechanical strength properties of Ti and steel. The Johnson-Cook model is fitted to the obtained interface normal stress-normal strain data based on the nanoimpact experiments. The coefficient of restitution in the mechanical loading and its dependence on the interface dynamic hardness and interface impact velocity validate the experimental results. The results show that interfacial properties are affected by the rate of loading and are largely dependent upon the interface structural inhomogeneity.

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“…The laser-induced crystallization (LIC) of hydrogenated amorphous silicon (a-Si:H) has been a subject of extensive research in recent years, motivated predominantly by technological applications to thin film semiconductors. LIC studies instrumented by Raman spectroscopy appeared more recently [1][2][3][4][5], enabling in situ quantification of the phase composition, along with an indirect estimate of the sample temperature and other structural properties [6,7]. The main advantage of this approach is that the same laser may simultaneously control the LIC process and also serve as the Raman excitation laser source.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

Očenášek

Novák

Prušáková

2017

Applied Surface Science

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This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

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An in situ platform for the investigation of Raman shift in micro-scale silicon structures as a function of mechanical stress and temperature increase

Cited by 34 publications

References 65 publications

In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature

In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature

Evaluation of Incoherent Interface Strength of Solid-State-Bonded Ti64/Stainless Steel Under Dynamic Impact Loading

Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

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