2019
DOI: 10.1166/jnn.2019.15977
|View full text |Cite
|
Sign up to set email alerts
|

Micro-Raman Spectroscopy in Self-Catalyzed Indium Phosphide Nanostructures: Morphology and Substrate Effects

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…One-dimensional nanostructures (nanopillars and nanocones) were grown via self-catalyzed vapor-liquid-solid process on InP(111)B substrate by a Veeco D125 MOVPE reactor using trimethylindium (TMIn), tertiarybutylphosphine (TBP), and tertiarybutylarsine (TBA) as precursors [13, 23, 41]. Nanopillars and nanocones were grown at substrate temperatures of ~ 350 °C and ~ 400 °C, respectively.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…One-dimensional nanostructures (nanopillars and nanocones) were grown via self-catalyzed vapor-liquid-solid process on InP(111)B substrate by a Veeco D125 MOVPE reactor using trimethylindium (TMIn), tertiarybutylphosphine (TBP), and tertiarybutylarsine (TBA) as precursors [13, 23, 41]. Nanopillars and nanocones were grown at substrate temperatures of ~ 350 °C and ~ 400 °C, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The performance of any of these devices depends on the optical and electronic properties of nanoscale semiconductors, which in turn vary critically with the crystallinity, morphology, and composition of the nanowires [20, 21]. Among a suite of available characterization tools, Raman spectroscopy is a non-destructive technique that can provide insights into the effects of shape, structure, and composition of semiconductor structures (i.e., thin films [22], nanowires [23], and quantum dots [24]) on physical properties (i.e., phonon confinement and surface optical phonon modes [25, 26]). Polarization-dependent Raman scattering measurements on single semiconducting nanowires revealed that highly anisotropic shapes of nanowires have angular dependences of Raman active modes and scattered intensities (i.e., Si [27], GaAs [28], InAs [29, 30], GaP [31, 32], ZnO [33], GaN [34]).…”
Section: Introductionmentioning
confidence: 99%