“…The performance of any of these devices depends on the optical and electronic properties of nanoscale semiconductors, which in turn vary critically with the crystallinity, morphology, and composition of the nanowires [20, 21]. Among a suite of available characterization tools, Raman spectroscopy is a non-destructive technique that can provide insights into the effects of shape, structure, and composition of semiconductor structures (i.e., thin films [22], nanowires [23], and quantum dots [24]) on physical properties (i.e., phonon confinement and surface optical phonon modes [25, 26]). Polarization-dependent Raman scattering measurements on single semiconducting nanowires revealed that highly anisotropic shapes of nanowires have angular dependences of Raman active modes and scattered intensities (i.e., Si [27], GaAs [28], InAs [29, 30], GaP [31, 32], ZnO [33], GaN [34]).…”