Mg diffusion and activation along threading dislocations in GaN

Yi, Wei; Kumar, Ashutosh; Uzuhashi, Jun; Kimura, Takashi; Tanaka, Ryo; Takashima, S.; Edo, Masaharu; Yao, Yongzhao; Ishikawa, Yukari; Chen, Jun; Ohkubo, T.; Sekiguchi, Takashi; Hara, Kazuhiro

doi:10.1063/5.0009596

Cited by 14 publications

(7 citation statements)

References 31 publications

(36 reference statements)

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“…Recently it was reported that Mg diffuses into the n-type GaN through the dislocations [57]. Because of diffusion of the Mg along the dislocations, the Mg doping level can be reduced to 10 16 cm −3 [58]. Moreover, for this doping level of 10 16 cm −3 , Mg dopants have an activation energy of about 0.25 eV [59], close to the one extracted from T 1 peak.…”

Section: Discussion On Defect Statessupporting

confidence: 60%

Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy

Lechaux¹,

Minj²,

Méchin³

et al. 2020

Semicond. Sci. Technol.

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Mg-doped GaN-on-Si p+n diodes have been fabricated and characterized by static electrical and deep-level transient Fourier spectroscopy (DLTFS) measurements. From static capacitance-voltage (C–V) and current–voltage (I–V) characteristics, we estimated the diffusion barrier of the p+n diode close to the GaN band gap at room temperature. The temperature dependence of the capacitance showed freeze-out effect of the Mg-dopants at 200 K. From DLTFS measurements for various reverse bias and pulse voltages, two peaks were found and are composed of different defect states. The first peak with two components was related to diffusion of Mg p-type dopants in the n-GaN and VN-related defects. The two components have activation energies close to 0.25 eV, from valence band and conduction band with a capture cross-section of ∼10−16 cm2. The second peak with two components showed temperature shifts with the pulse height indicating a band-like behavior. This peak was commonly attributed to deep acceptor CN-related defects with an activation energy of E V +0.88 eV and a capture cross-section of 10−13 cm2. A second acceptor level was found, with an activation energy of 0.70 eV and a capture cross-section of 10−15 cm2. This second component was previously attributed to native point defects in GaN.

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Section: Discussion On Defect Statessupporting

confidence: 60%

Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy

Lechaux¹,

Minj²,

Méchin³

et al. 2020

Semicond. Sci. Technol.

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“…Then, the same slope of about 0.0017 for Samples A and B″ demonstrates that the Fe diffusion flux is not relevant to the Fe doping concentration, 3D growth mode, and the edge-type TD densities. It is interesting to note that Mg diffusion along the edge- and mixed-type TDs was evidenced [ 37 ]. However, our current study reveals that the edge-type TDs densities are not the key factor on Fe diffusion.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

et al. 2022

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The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly insulating buffer resulted in Fe segregation and 3D island growth, which played the role of a nano-mask. The in situ reflectance measurements revealed a transition from 2D to 3D growth mode during the growth of a heavily Fe-doped GaN:Fe layer. The 3D growth mode of Fe nano-mask can effectively annihilate edge-type threading dislocations and improve transfer properties in the channel layer, and consequently decrease the vertical leakage current by one order of magnitude for the applied voltage of 1000 V. Moreover, the employment of GaN:C film on GaN:Fe buffer can further reduce the buffer leakage-current and effectively suppress Fe diffusion.

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“…For the CL measurements, cross-sectional specimens were prepared by a novel angle cutting method, the details of which are described elsewhere. 19,34 The CL measurements were conducted using a HORIBA MP32 CL system attached to a Hitachi SU6600 field emission scanning electron microscope (FESEM) at an incident energy of 3 kV and a specimen temperature of 78 K.…”

Section: Methodsmentioning

confidence: 99%

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Kumar

Uzuhashi

et al. 2020

Journal of Applied Physics

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Efficient acceptor activation in gallium nitride (GaN) achieved through Mg ion-implantation depends mainly on the concentration of implanted Mg ions and the post-implantation annealing process. In this study, we conducted correlative scanning transmission electron microscopy, atom probe tomography, and cathodoluminescence (CL) measurements on Mg-implanted GaN layers with the implanted concentration ranging from 1 × 10 17 cm −3 to 1 × 10 19 cm −3 . It was found that at the implanted concentration of ∼1 × 10 18 cm −3 , Mg atoms were randomly distributed with defects likely to be vacancy clusters whereas at the implanted concentration of ∼1 × 10 19 cm −3 , Mg-enriched clusters and dislocation loops were formed. From the CL measurements, the donor-acceptor pair (DAP) emissions from the implanted and un-implanted regions are obtained and then compared to analyze Mg activation in these regions. In the sample with Mg ∼1 × 10 19 cm −3 , the existence of Mg-enriched clusters and dislocations in the implanted region leads to a weaker DAP emission, whereas the absence of Mg-enriched clusters and dislocations in the sample with Mg ∼1 × 10 18 cm −3 resulted in a relatively stronger DAP emission.

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Mg diffusion and activation along threading dislocations in GaN

Cited by 14 publications

References 31 publications

Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy

Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

Influence of implanted Mg concentration on defects and Mg distribution in GaN

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Mg diffusion and activation along threading dislocations in GaN

Cited by 14 publications

References 31 publications

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

Influence of implanted Mg concentration on defects and Mg distribution in GaN

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Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy

Characterization of defect states in Mg-doped GaN-on-Si p⁺n diodes using deep-level transient Fourier spectroscopy