Methods of Producing Standard X-Ray Diffraction Powder Patterns

McMurdie, Howard F.; Morris, Marlene C.; Evans, Eloise H.; Paretzkin, Boris; Wong‐Ng, W.; Hubbard, Camden R.

doi:10.1017/s0885715600011271

Cited by 171 publications

(120 citation statements)

References 12 publications

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“…The interplanar distances measured in the PS for the four spots closest to the centre were: 0.51, 0.364, 0.307, and 0.283 nm. They correspond to d 100 = 0.509 nm, d 011 = 0.370 nm, d ⎯111 = 0.316 nm, and d 111 = 0.284 nm in m-ZrO 2 [44]. The angles were: 83.0 deg between the planes (100) and (011), and 71.0 deg between (111) and (⎯111), which corresponded within ± 1 deg to those in monoclinic zirconia: 83.5 and 72.0 deg (calculated from the data given in [45]).…”

Section: Resultsmentioning

confidence: 86%

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂

Kasatkin

Girgsdies

Ressler

et al. 2004

Journal of Materials Science

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Section: Resultsmentioning

confidence: 86%

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂

Kasatkin

Girgsdies

Ressler

et al. 2004

Journal of Materials Science

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“…Growing 1100 nm-thick ZnO:Al at high DEZ does not lead to the perfect h002i texture: the intensity of h002i peak is lower with additional h101i, h102i, and h103i orientations appearing in the spectrum. In the ZnO powder spectrum 36 shown in the Figure 9(b) h002i and h103i contributions occupy only third and fifth places on the intensity scale with 44% and 28% of the strongest h101i peak intensity, respectively. In a relative comparison with the powder spectrum high DEZ sample still exhibits dominant h002i and h103i components, although being less h002i-textured (factor of 10 lower intensity of h002i peak).…”

Section: -4mentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...

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“…In HNbO 3 , the peak is symmetric, and in NbO x , tailing to the longer side is recognized. Such the tailing of the NbO peak is also seen in N-Nb 2 O 5 and H-Nb 2 O 5 , where these crystals 34), 35) are constituted by distorted NbO 6 octahedra. In the previous spectroscopic study, 25) DFT calculations suggested the structural similarity to M-Nb 2 O 5 , and in D(r), however, it is hard to say that M-Nb 2 O 5 shows the best agreement with NbO x .…”

Section: Short and Medium Range Structures From Hexrd Analysesmentioning

confidence: 69%

Structural analyses and reverse Monte Carlo modeling of niobium oxide amorphous film prepared by sputtering method

Sajiki

Benino

Oki

et al. 2017

J. Ceram. Soc. Japan

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Structural analyses of niobium oxide (NbO x ) amorphous film prepared with a sputtering method have been performed by using synchrotron X-ray radiation at SPring-8. The composition was determined as Nb 2 O 5 ·0.8H 2 O from the measurements of Rutherford back scattering, X-ray fluorescence, X-ray absorption near edge structure, and thermal desorption spectroscopy. Structural information was obtained by extended X-ray absorption fine structure and high energy X-ray diffraction measurements. It was supposed from the experimental data that NbO x consisted of distorted NbO n polyhedra connected by corner-and edge-sharing. Structural models were constructed with reverse Monte Carlo (RMC) simulations. In the RMC models, the structural characteristics were successfully reproduced, and H atoms were, however, randomly distributed. Then, bond valence sum (BVS) constraint was introduced to the RMC simulation. As the results, narrower distribution in BVS was achieved for all the constituent atoms, and distinct OH bonds were effectively generated in the RMC model.

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Methods of Producing Standard X-Ray Diffraction Powder Patterns

Cited by 171 publications

References 12 publications

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Structural analyses and reverse Monte Carlo modeling of niobium oxide amorphous film prepared by sputtering method

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Methods of Producing Standard X-Ray Diffraction Powder Patterns

Cited by 171 publications

References 12 publications

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO2

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO2

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Structural analyses and reverse Monte Carlo modeling of niobium oxide amorphous film prepared by sputtering method

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HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO₂