Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency

Dastjerdi, Hadi Tavakoli; Boulanger, Jonathan; Kuyanov, P; Aagesen, Martin; LaPierre, Ray

doi:10.1088/0957-4484/27/47/475403

Cited by 31 publications

(34 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This effect may be minimised through the use of optimised droplet consumption protocols. 8,[21][22][23] In summary, we have examined the defects seen in semiconductor NWs when growth is less than perfect. We use a Burgers circuit protocol that can be applied to high-resolution electron micrographs of multiply twinned material without the problems or ambiguity that affect other approaches.…”

Section: Discussionmentioning

confidence: 99%

Stable Defects in Semiconductor Nanowires

et al. 2018

View full text Add to dashboard Cite

Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor-liquid-solid growth and subsequent vapor-solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers.

show abstract

Section: Discussionmentioning

confidence: 99%

Stable Defects in Semiconductor Nanowires

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Due to its narrow band gap of 0.7 eV, InN is of particular interest for infrared components such as light emitting diodes, laser diodes and solar cells [3], [4], [5], [6], [7] . Recently, one-dimensional geometry of vertical nanowires (NWs) has attracted much attention for monolithic integration of free-standing III-V semiconductors with Si for high performance LED [8] and solar cell applications [9], [10] . In many cases, NWs were proven efficient for improving material properties and device performance relative to thin films [11], [12], [13] .…”

Section: Introductionmentioning

confidence: 99%

Formation of voids in selective area growth of InN nanorods in SiN_x on GaN templates

et al. 2020

View full text Add to dashboard Cite

Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy (HVPE) on patterned GaN/c-Al2O3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

show abstract

“…The self-catalyzed variant 16 provides an elegant route to complex multi-shell structures in a single growth run 14 by consuming the Ga VLS catalyst in situ 17,18 . However this can lead to crystal phase heterostructures due to the changing contact angle of the Ga catalyst as its volume shrinks 19 .…”

Section: Introductionmentioning

confidence: 99%

Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In as a catalyst

et al. 2020

View full text Add to dashboard Cite

show abstract

Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency

Cited by 31 publications

References 30 publications

Stable Defects in Semiconductor Nanowires

Stable Defects in Semiconductor Nanowires

Formation of voids in selective area growth of InN nanorods in SiN_x on GaN templates

Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In as a catalyst

Contact Info

Product

Resources

About

Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency

Cited by 31 publications

References 30 publications

Stable Defects in Semiconductor Nanowires

Stable Defects in Semiconductor Nanowires

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst

Contact Info

Product

Resources

About

Formation of voids in selective area growth of InN nanorods in SiN_x on GaN templates

Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In as a catalyst