Stable Defects in Semiconductor Nanowires

Sanchez, Ana M.; Gott, James A.; Fonseka, H. Aruni; Zhang, Yunyan; Liu, Huiyun; Beanland, Richard

doi:10.1021/acs.nanolett.8b00620

Cited by 17 publications

(26 citation statements)

References 25 publications

(53 reference statements)

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“…Whereas, the as-grown NWs exhibit ZB, WZ or a mixed crystal phase with stacking defaults or kinking along the growth direction of NW. Sanchez et al also described stable topologically protected line defects in GaAsP NWs in their latest work, which have not been previously discovered [114]. These defects act as the nonradiative recombination centers, which have great influence on the NW performances.…”

Section: Evaluations Of the Catalyst Epitaxymentioning

confidence: 97%

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

et al. 2018

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Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.

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Section: Evaluations Of the Catalyst Epitaxymentioning

confidence: 97%

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

et al. 2018

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“…Figure a–c shows the three different crystal configurations that can be observed in semiconductor NWs when viewed along the same equivalent direction, the [110] direction for the cubic structure, and the

[11 \overset{true¯}{2} 0]

direction for the hexagonal structure. Figure a,b shows the two twin components with an in plane 180° rotation between the two structures . This type of twin is known as an ortho twin and maintains the same polarity with the growth direction .…”

Section: Challenges In Nanowire Growthmentioning

confidence: 99%

Engineering III–V Semiconductor Nanowires for Device Applications

Wong‐Leung

Yang

et al. 2019

Advanced Materials

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of silicon along the direction. Hiruma et al. [4] demonstrated that GaAs NWs-then termed whisker growth can be grown by metal-organic chemical vapor deposition (MOCVD) with a similar VLS mechanism. A spate of papers from the same group clearly identified that this process could be extended to InAs NWs and the group was successful in growing a GaAs p-n junction (see ref.[5] for a review). This concept was further expanded in NW heterostructures by Samuelson and co-workers in Lund. [6] This whole sequence of research findings triggered the growing new research field of semiconductor NWs which peaked in 2009 with a vast number of publications. Figure 1 is a plot of the number of publications published per year in the field of "semiconductor nanowires" for over two decades from Clarivate Analytics. Since 2009, the number of publications within this field is about 1000 per year. Herein, we review our recent NW work and expand on our future directions within this field. III-V semiconductor nanowires offer potential new device applicationsbecause of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

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“…Presence of such structural defects in general deteriorates the optical properties of the nanowires and need to be avoided [104]. Fig.…”

Section: With the Permission Of Wileymentioning

confidence: 99%

“…Atomic-resolution HAADF-STEM image of various types of stable defects in a GaAsP nanowire, analyzed by a Burgers circuit protocol. Reprinted from [104] with the permission of ACS Point defect, single atoms -Incorporation of Au seed impurities degrades the electronic properties of the semiconductors and is in general to be avoided for applications such as charge transport and optoelectronics [ 105 ]. Homogeneous coating of Si nanowires with Au nanoclusters, in contrast, has been proven particularly efficient as bio-sensors with unique capability of detecting breast cancer cell.…”

Section: With the Permission Of Wileymentioning

confidence: 99%

Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy

Zamani

Arbiol

2019

Nanotechnology

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Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of the materials at the atomic scale, and make a vast impact on our understanding of materials science, especially in the field of semiconductor 1-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This Review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points up various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the paper, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.

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Stable Defects in Semiconductor Nanowires

Cited by 17 publications

References 25 publications

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Engineering III–V Semiconductor Nanowires for Device Applications

Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy

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