Method for evaluation of hysteretic interface properties and their application to anodisedinsb MIS diodes

Nakagawa, Tadashi; Fujisada, Hiroyuki

doi:10.1049/ip-i-1.1984.0015

Cited by 4 publications

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“…28 The border traps respond to C-V sweeps, and theoretically contribute to every hysteresis. 28,29 A schematic illustrating the motion of electrons interacting with oxide traps in a single loop of CV sweeps was well explained by Nepal et al 24 The V FB shift for the pretreated samples varied considerably. Specifically the H 2 plasma treated sample had the largest positive V FB shift followed by HF and HCl treated samples.…”

Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 84%

“…28,29 The interface states of Al 2 O 3 /GaN distributed within the bandgap of GaN. So electrons could be captured by these states when the voltage is changed.…”

Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 99%

“…The hysteresis originates from the combined effects of the interface states of Al 2 O 3 /GaN and oxide traps in the ALD Al 2 O 3 . 28,29 The interface states of Al 2 O 3 /GaN distributed within the bandgap of GaN. So electrons could be captured by these states when the voltage is changed.…”

Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 99%

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A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

Wei

Hossain

Briggs

et al. 2014

ECS J. Solid State Sci. Technol.

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Nitrogen-polar gallium nitride offers several advantages over Ga-polar GaN for high frequency-high power electronic devices, but its processing has not been fully developed. Here we report on a systematic study of the effect of surface pretreatments on N-polar GaN for metal oxide semiconductor capacitors (MOSCAPs). Bulk n-type GaN (0001) substrates were prepared with a variety of treatments including: HF; HCl; base-piranha; H 2 plasma; and no pretreatment for comparison. Then 14nm thick Al 2 O 3 layers were deposited by atomic layer deposition (ALD). Both the original surfaces of GaN and ALD films were characterized by atomic force microscopy (AFM). MOSCAPs were fabricated and characterized by capacitance-voltage (C-V) and current voltage (I-V) measurements. The surface morphology and electrical performance was greatly affected by the pretreatments due to the reactive nature of N-polar GaN. The MOSCAP fabricated on GaN as-received with no additional preparation had the best performance including the smallest hysteresis (0.03V), lowest leakage current density (2.09 × 10 −8 A/cm 2 at +4V) and total trap density (2.47 × 10 10 cm −2 eV −1 ). This was correlated to the smoothest surface morphology (0.23 nm). The wide bandgap semiconductor gallium nitride (GaN) is of great interest not only for optoelectronic devices such as blue LEDs, 1 laser diodes, 2 and UV detectors, but also for highly efficient electronic devices operating at high frequency, temperature and power. After years of development, Ga-polar GaN based high electron mobility transistors (HEMTs) have been demonstrated with excellent performance and high RF output power.3,4 Increasing the maximum frequency by scaling down the GaN HEMT dimensions to reduce electron transit time, establishing control of the contact resistance and capacitive elements are critically important to prevent device delay times and to achieve the best possible device performance.5 Nitrogen-polar GaN has potential advantages over Ga-polar GaN for high-frequency applications due to its low contact resistance and a natural back barrier to improve electron confinement.6-8 For example, an extremely low contact resistance of 23 -μm was reported by Mishra et al. 9 To date, most of the N-polar GaN HEMT devices employ structures with a Schottky barrier as the gate contact. 6,10,11 However, a metaloxide-semiconductor structure is preferred, as it provides a higher input impedance, larger gate voltage swings, and lower gate leakage currents. 12,13 Aluminum oxide (Al 2 O 3 ) is an excellent gate dielectric for IIInitride based devices due to its large bandgap (7∼9 eV), relatively high dielectric constant (∼9) and high thermal stability (up to 1000• C). 14-20 Precise control of this dielectric's thickness is necessary to maintain the aspect ratio between the gate length and the oxide thickness for good high frequency performance. Atomic layer deposition (ALD) offers excellent thickness control for the deposition of such dielectrics, 21 but the initial condition of the substrate surface is crucia...

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Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 84%

“…28,29 The interface states of Al 2 O 3 /GaN distributed within the bandgap of GaN. So electrons could be captured by these states when the voltage is changed.…”

Section: C-v and I-v Measurements For Al 2 O 3 On Ganmentioning

confidence: 99%

See 1 more Smart Citation

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

Wei

Hossain

Briggs

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…It is also important to take the measurement voltages into account, because carrier injection occurs above the flat-band voltage. 10) According to the depletion layer approximation, the experimental flat-band voltage of this capacitor is about 0.1 V. 11) We decided to use the relatively high voltage of 0.15 V for measurement, because every CV curve showed a slightly flat band-shift. Figure 3 shows the results of MR measurement.…”

Section: Resultsmentioning

confidence: 99%

Influence of density of state of ferromagnetic filter layer in charge injection properties of Si metal–insulator–semiconductor capacitor with a magneto-electric gate insulator

Yokota

Murata

Gomi

2013

J. Ceram. Soc. Japan

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We investigated the detailed charge injection properties of a metal (Pt)/insulator (Cr 2 O 3 )/floating gate layer (Cr 2 O 3¹x )/magnetic filtering layer/tunnel layer (CeO 2 )/semiconductor (Si) capacitor. This capacitor shows charge injection type capacitancevoltage (CV) properties with a hysteresis window. The hysteresis window width (HWW) can be controlled by an external electric or magnetic field. Changes in the HWW are determined by the combined spin density of state of a spin filter layer and a floating gate. Our results indicate that this capacitor may be able to electromagnetically store multiple charges.

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Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

2015

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Method for evaluation of hysteretic interface properties and their application to anodisedinsb MIS diodes

Cited by 4 publications

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A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

Influence of density of state of ferromagnetic filter layer in charge injection properties of Si metal–insulator–semiconductor capacitor with a magneto-electric gate insulator

Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

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Method for evaluation of hysteretic interface properties and their application to anodisedinsb MIS diodes

Cited by 4 publications

References 0 publications

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3

Influence of density of state of ferromagnetic filter layer in charge injection properties of Si metal–insulator–semiconductor capacitor with a magneto-electric gate insulator

Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

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A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃

A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al₂O₃