Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

Войцеховский, А. В.; Nesmelov, S. N.; Dzyadukh, S. М.

doi:10.1007/s11182-015-0532-7

Cited by 23 publications

(6 citation statements)

References 12 publications

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“…The structures with oxide formed in glow discharge plasma demonstrate slightly lower slow surface states density in comparison to the structures with oxide formed in remote RF-plasma. Wide hysteresis of C-V curves presented in known works [12][13][14][25][26][27] agrees with our conclusions on unsatisfactory passivation and stabilization abilities of native HgCdTe oxide, formed during storage in air, and anodic native oxide, formed in a liquid electrolyte. An interface between deposited Al 2 O 3 and non-oxidized HgCdTe has also poor electro-physical properties.…”

Section: Resultssupporting

confidence: 91%

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Zakirov¹,

Kesler²,

Sidorov³

et al. 2020

Semicond. Sci. Technol.

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Metal-insulator-semiconductor structures with atomic layer deposited (ALD) Al 2 O 3 and ultra-thin native oxide were formed on n-type variband Hg 1-x Cd x Te of two different volume compositions x, referred to as MWIR and LWIR. It is shown that presence of native oxide prior to plasma-enchanced ALD process and origination of this oxide are crucial to properties of an insulator-semiconductor interface. Ultra-thin native oxide formed in glow discharge or remote RF plasma is much more stable than oxide formed during storage of sample in air and provides significantly improved interface quality. The positive sign of fixed charge introduced by plasma oxide is more preferable for an n-type semiconductor than the negative one, but obtained density of fixed charge up to 1 × 10 12 cm −2 is still quite high and should be reduced. Density of slow surface states, being responsible for hysteresis of C-V characteristics, is much lower in case of plasma oxide, with C-V curves showing near-ideal high-frequency behavior.

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Section: Resultssupporting

confidence: 91%

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Zakirov¹,

Kesler²,

Sidorov³

et al. 2020

Semicond. Sci. Technol.

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“…The effective charge density found from the value of the flatband voltage for Al 2 O 3 is slightly higher than the density for the system SiO 2 /Si 3 N 4 at forward and reverse direction voltage sweep. The hysteresis of capacitance-voltage characteristics for all structures is caused by charge trapping at the interface and in insulator layer due to slow states [16,17]. The slow interface trap density found from hysteresis of the CV curves for structures based on n-HgCdTe with This could mean a very low density of the impurity-defect centers near the interface acting as dopants and changing the charge state when changing the voltage [16].…”

Section: Discussionmentioning

confidence: 93%

Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al₂O₃ insulator

Войцеховский

Nesmelov

Dzyadukh

et al. 2016

Phys. Status Solidi C

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The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)‐Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al2O3 have a large enough insulator capacitance (compared to SiO2/Si3N4), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat‐band voltage. The effective charge density found from the value of the flat‐band voltage and slow interface trap density for structures with Al2O3 comparable with the corresponding densities for structures with SiO2/Si3N4. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The difference in the electron concentration measured with the Hall-effect-and capacitance measurements can be related to the specific features of the C-V measurements, which yield carrier concentration in a thin sub-surface (and graded-gap) layer with the thickness < 0.4 µm as counted from the insulator/semiconductor interface. It was shown that this concentration can greatly exceed that in the bulk of the material [27,28], presumably due to the fact that indium concentration increases with the graded-gap layer composition increasing (see inset in figure 1).…”

Section: (B)) the Low-defect Layermentioning

confidence: 99%

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Іжнін¹,

Mynbaev

Войцеховский

et al. 2020

Semicond. Sci. Technol.

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The Hall-effect (with mobility spectrum analysis) and capacitance measurements were combined with transmission electron microscopy for the study of molecular-beam epitaxy-grown n-type Hg1-xCdxTe (x = 0.22) films subjected to various operations used in the fabrication of p +-n photodiode structures. The operations included arsenic ion implantation, activation annealing and extra annealings aimed at investigation of the details of the p +-n junction formation. A detailed characterization of p+-type layers formed by the implantation was done. A high degree of arsenic activation by activation annealing was demonstrated, along with the annihilation of implantation-induced extended (dislocation loops) and quasi-point defects, and the disappearance of electrically active centres associated with them. The annealing was also shown to cause the activation of residual acceptors, changing the degree of electrical compensation in the n-‘base’ of some of the p +-n structures.

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Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

Cited by 23 publications

References 12 publications

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al₂O₃ insulator

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

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Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4

Cited by 23 publications

References 12 publications

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3

Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al2O3 insulator

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

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Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al₂O₃ insulator

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation