Method for electrical detection of bond wire lift-off for power semiconductors

Lehmann, Jörg; Netzel, M.; Herzer, R.; Szcześniak, Paweł

doi:10.1109/ispsd.2003.1225295

Cited by 39 publications

(33 citation statements)

References 2 publications

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“…During tests, bonding wire liftoff can be electrically detected by measuring V CE,sat under low IC conditions [65]- [67]. The criterion to detect bond-wire failure was a +5% increment of V CE,sat [15], [68].…”

Section: Package-related Failure Mechanismsmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

939

336

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Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

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Section: Package-related Failure Mechanismsmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

939

336

View full text Add to dashboard Cite

show abstract

“…Representing a power device generating high temperature, two commercial SMD type resistors are used as a heat source (each size: 6.4mm × 3.2mm × 0.5mm). The total size of the two resistors is identical with the dimension of real IGBT devices [19,21].…”

Section: A Fabrication Of the Simplied Power Modulementioning

confidence: 99%

“…Temperature elevation increases the resistor value, and sequentially changes current passing through the resistors. Also, the resistor can detect wire bond lift-off [19] or unbalanced device currents [20,21]. This method provides in-situ and real-time measurements with minor modifications in module design.…”

Section: Introductionmentioning

confidence: 99%

Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

Kim

Yoon

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper presents a novel piezoelectric sensor, which is integrated in power modules and analyzes temperature and thermal-mechanical stress in real time. Due to the increased power density, recent power modules are often exposed to high operating temperatures. Thus, it is critical to measure temperature and (related) thermal stress in power modules. The piezoelectric sensor proposed herein is fabricated by attaching PZT pieces on a direct bonded copper (DBC) substrate. Heat from operating power devices deflects power substrates and generates thermal stress, which is picked up by in-built piezoelectric sensors optimally located at critical locations. As the sensor locations are away from heatgenerating power devices, their effects on device performance are negligible. Both simulation and experiment results demonstrate that the proposed sensor provides a very good linearity (R 2 = ~0.99) in the temperature range from 40°C to 160°C. This sensor characteristics were consistent in different measurements. Therefore, our in-built piezoelectric thermal sensor facilities reliable in-situ monitoring of temperature distribution and thermal stress in power modules experiencing high temperatures.

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“…Assuming a homogeneous temperature within the power die, the drift region resistance R N−_cell can be considered constant for all elementary cells. However, for these conditions, the channel resistance R CH_cell of the elementary cells depends solely on the voltage between gate and source (V GS ) of each elementary cell (6). In fact, variations in the electric potential mapping of the source metallization (Figs.…”

Section: A Vertical Resistance Distribution In Power Diesmentioning

confidence: 99%

Estimating Current Distributions in Power Semiconductor Dies Under Aging Conditions: Bond Wire Liftoff and Aluminum Reconstruction

Nguyen

Lefebvre

Joubert

et al. 2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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Bond wire liftoff and metallization reconstruction are two of the most frequent failures observed during power semiconductor module operation. Aging of the top-level power dies, which occurs due to power cycling, results in the redistribution of the current in the metallization layer and the elementary cells of the power dies (MOSFET-Metal Oxide Semiconductor Field Effect Transistor, or IGBT-Insulated Gate Bipolar Transistor), leading to a risk of critical failure when either the local current density or the local temperature reaches a critical value. This paper reports on the experimental estimation of the distribution of dc flowing in the power dies and investigates the effect of the local degradation of aluminum sheet resistance and bond wire liftoff on the current distribution. The local distribution of the current flowing in the metallization layer and in the power dies was estimated by mapping the electric potential of the source metallization. The obtained results facilitate the identification of failure risks that result from the aging process (which occurs due to current redistribution) of top-level power dies and provide an understanding of the physical origins of failures.Index Terms-Aluminum reconstruction, bond wire liftoff, current distribution, electric potential mapping, modes of failure.

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Method for electrical detection of bond wire lift-off for power semiconductors

Cited by 39 publications

References 2 publications

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

Estimating Current Distributions in Power Semiconductor Dies Under Aging Conditions: Bond Wire Liftoff and Aluminum Reconstruction

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