Metals and ITO Contact Nature on ZnO and NiO Thin Films

Multi-modal characterization of kesterite thin-film solar cells: experimental results and numerical interpretation

“…After trying different combinations of ohmic and Schottky boundary conditions, we chose to apply the Schottky boundary condition at the top of ZnO or CdS, and at the bottom of the CZTS region. At the front contact (top of ZnO or CdS), we have an ITO layer with work function ϕ M = 4.7 eV, 39 and at the back contact (bottom of CZTS) we have a MoS 2 layer. Estimating the work function of MoS 2 is challenging and we first used the value ϕ M = 5 eV in our simulation, which is approximately equal to the work function of Mo.…”

Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

“…As a result of the sustainability analysis, Mo and Fe are seen as promising candidate materials for ZnO TFTs, but understanding it's behaviour as ohmic contacts with ZnO is vital. [20] For instance, Ning et al reported the formation of a molybdenum oxide interlayer between the Mo and a-STO that prevent the diffusion of Mo atoms into a-STO film resulting in a better-quality contact interface [18]. In terms of electrical behaviour, for an ideal metal-semiconductor junction, the barrier height for electron injection (ΦB) depends primarily on the metal work function (ΦM) and the electron affinity of the semiconductor (χS), and is given by the Mott-Schottky equation:…”

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

“…c) Bandgap diagrams and work function positions (dashed lines) of different TCOs, CBMs, TMOs, and FCMs with the c‐Si energy band edges (gray bar) as a reference. [ 112–133 ] d) Measured Schottky barrier heights of different TCOs, CBMs, and TMOs. [ 134–141 ] X‐ray photoelectron spectroscopy (XPS) spectra of e) nondoped, f) V‐doped, and g) Nb‐doped MoO 3− x films.…”