Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

Wei, Xing; Wang, G.H.; Zhang, G.Z.; Zhu, Xukun; Ma, Xiaoqing; Chen, L.H.

doi:10.1016/s0022-0248(01)02386-7

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…Radical species forming in TMGa system may induce N-related nonradiative defects. In the growth of GaAsN, X. Wei et al also reported that luminescence properties were improved by using TEGa [6]. Activation energy (T 0 ) and ratio of non-radiative recombination rates in GaPN grown using TEGa depending on the substrate temperature was shown in Fig.…”

Section: Contributed Articlementioning

confidence: 93%

Luminescence properties of GaPN layer grown by OMVPE

Hatakenaka¹,

Wakahara

Nakanishi

et al. 2008

Phys. Status Solidi (c)

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The effect of carbon incorporation on luminescence properties of GaPN grown by organometallic vapor phase epitaxy (OMVPE) has been investigated. Trimethylgallium (TMGa) and trimethylgallium (TEGa) were used as Ga precursors. The carbon concentration of 1.1×1017cm–3 was obtained by using TEGa, whereas that of GaPN grown using TMGa was 4.0×1017cm–3. Non‐radiative recombination rate was also reduced to about 1/100 by using TEGa. Moreover, the spatial fluctuation of N content and Non‐radiative rate was reduced with increasing substrate temperature. Therefore, luminescence properties of GaPN could be improved by using TEGa at high substrate temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 93%