Luminescence properties of GaPN layer grown by OMVPE

Abstract

The effect of carbon incorporation on luminescence properties of GaPN grown by organometallic vapor phase epitaxy (OMVPE) has been investigated. Trimethylgallium (TMGa) and trimethylgallium (TEGa) were used as Ga precursors. The carbon concentration of 1.1×1017cm–3 was obtained by using TEGa, whereas that of GaPN grown using TMGa was 4.0×1017cm–3. Non‐radiative recombination rate was also reduced to about 1/100 by using TEGa. Moreover, the spatial fluctuation of N content and Non‐radiative rate was reduced with increasing substrate temperature. Therefore, luminescence properties of GaPN could be improved by using TEGa at high substrate temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

“…3 shows N-content dependence of carrier concentration and mobility in C-doped GaP(N). The carrier concentration at first increased with N incorporation, as expected from the positive dependence of C concentration on N incorporation (DMHy flow rate) [6]. However, the carrier concentration was found to decrease for N-content above 1%, although C concentration increased.…”

“…In the growth of GaPN, Geisz et al [9] has been reported that C is unintentionally incorporated from organometallic sources (TEGa and DMHy) in OMVPE-grown GaPN and it acts as acceptor. In particular, DMHy is the major origin of C incorporation in GaPN at growth temperature of 600 1C [6]. Therefore, C-doped p- GaPN ratio was controlled to stabilize the N-content of C-doped p-GaPN.…”

“…These degrade the optical and electrical properties of (In)GaPN alloys. Therefore, we tried to grow (In)GaPN alloy by organometallic vapor-phase epitaxy (OMVPE) [5,6]. This method is free from the N-plasma.…”